Investigation of the optical and structural characteristics of Ge self-assembled quantum dots grown directly on Si substrates and on strain relaxed Si0.9Ge0.1 buffer layers

Sun Mo Kim, Anisha Gokarna, Ho Sang Kwack, Byoung O. Kim, Yong Hoon Cho, H. J. Kim, K. L. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The optical and structural properties of Ge quantum dots (QDs) of varying size grown on Si substrates with and without a partially relaxed Si 0.9Ge0.1 buffer layer, were investigated by means of photoluminescence and atomic force microscopy. A random, bimodal QD size distribution was observed for Ge QDs directly grown on Si substrates, while a well-aligned, unimodal size QD distribution was observed for Ge QDs with the Si0.9Ge0.1 buffer layer. Quantum confinement effects with dot size variation were evident from PL studies. A blue shift of the Ge QD emission energy with increasing excitation power is ascribed to the band bending at the type-II Si/Ge interface.

Original languageEnglish
Title of host publication2005 5th IEEE Conference on Nanotechnology
PublisherIEEE Computer Society
Pages569-572
Number of pages4
ISBN (Print)0780391993, 9780780391994
DOIs
Publication statusPublished - 2005
Event2005 5th IEEE Conference on Nanotechnology - Nagoya, Japan
Duration: 2005 Jul 112005 Jul 15

Publication series

Name2005 5th IEEE Conference on Nanotechnology
Volume2

Other

Other2005 5th IEEE Conference on Nanotechnology
CountryJapan
CityNagoya
Period05-07-1105-07-15

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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