Investigation of the optical and structural characteristics of Ge self-assembled quantum dots grown directly on Si substrates and on strain relaxed Si0.9Ge0.1 buffer layers

Sun Mo Kim; Anisha Gokarna; Ho Sang Kwack; Byoung O. Kim; Yong Hoon Cho; H. J. Kim; K. L. Wang

doi:10.1109/NANO.2005.1500828

Investigation of the optical and structural characteristics of Ge self-assembled quantum dots grown directly on Si substrates and on strain relaxed Si_0.9Ge_0.1 buffer layers

Sun Mo Kim, Anisha Gokarna, Ho Sang Kwack, Byoung O. Kim, Yong Hoon Cho, H. J. Kim, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The optical and structural properties of Ge quantum dots (QDs) of varying size grown on Si substrates with and without a partially relaxed Si _0.9Ge_0.1 buffer layer, were investigated by means of photoluminescence and atomic force microscopy. A random, bimodal QD size distribution was observed for Ge QDs directly grown on Si substrates, while a well-aligned, unimodal size QD distribution was observed for Ge QDs with the Si_0.9Ge_0.1 buffer layer. Quantum confinement effects with dot size variation were evident from PL studies. A blue shift of the Ge QD emission energy with increasing excitation power is ascribed to the band bending at the type-II Si/Ge interface.

Original language	English
Title of host publication	2005 5th IEEE Conference on Nanotechnology
Publisher	IEEE Computer Society
Pages	569-572
Number of pages	4
ISBN (Print)	0780391993, 9780780391994
DOIs	https://doi.org/10.1109/NANO.2005.1500828
Publication status	Published - 2005
Event	2005 5th IEEE Conference on Nanotechnology - Nagoya, Japan Duration: 2005 Jul 11 → 2005 Jul 15

Publication series

Name	2005 5th IEEE Conference on Nanotechnology
Volume	2

Other

Other	2005 5th IEEE Conference on Nanotechnology
Country	Japan
City	Nagoya
Period	05-07-11 → 05-07-15

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1109/NANO.2005.1500828

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Kim, S. M., Gokarna, A., Kwack, H. S., Kim, B. O., Cho, Y. H., Kim, H. J., & Wang, K. L. (2005). Investigation of the optical and structural characteristics of Ge self-assembled quantum dots grown directly on Si substrates and on strain relaxed Si_0.9Ge_0.1 buffer layers. In 2005 5th IEEE Conference on Nanotechnology (pp. 569-572). [1500828] (2005 5th IEEE Conference on Nanotechnology; Vol. 2). IEEE Computer Society. https://doi.org/10.1109/NANO.2005.1500828

Kim, Sun Mo ; Gokarna, Anisha ; Kwack, Ho Sang ; Kim, Byoung O. ; Cho, Yong Hoon ; Kim, H. J. ; Wang, K. L. / Investigation of the optical and structural characteristics of Ge self-assembled quantum dots grown directly on Si substrates and on strain relaxed Si_0.9Ge_0.1 buffer layers. 2005 5th IEEE Conference on Nanotechnology. IEEE Computer Society, 2005. pp. 569-572 (2005 5th IEEE Conference on Nanotechnology).

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title = "Investigation of the optical and structural characteristics of Ge self-assembled quantum dots grown directly on Si substrates and on strain relaxed Si0.9Ge0.1 buffer layers",

abstract = "The optical and structural properties of Ge quantum dots (QDs) of varying size grown on Si substrates with and without a partially relaxed Si 0.9Ge0.1 buffer layer, were investigated by means of photoluminescence and atomic force microscopy. A random, bimodal QD size distribution was observed for Ge QDs directly grown on Si substrates, while a well-aligned, unimodal size QD distribution was observed for Ge QDs with the Si0.9Ge0.1 buffer layer. Quantum confinement effects with dot size variation were evident from PL studies. A blue shift of the Ge QD emission energy with increasing excitation power is ascribed to the band bending at the type-II Si/Ge interface.",

author = "Kim, {Sun Mo} and Anisha Gokarna and Kwack, {Ho Sang} and Kim, {Byoung O.} and Cho, {Yong Hoon} and Kim, {H. J.} and Wang, {K. L.}",

year = "2005",

doi = "10.1109/NANO.2005.1500828",

language = "English",

isbn = "0780391993",

series = "2005 5th IEEE Conference on Nanotechnology",

publisher = "IEEE Computer Society",

pages = "569--572",

booktitle = "2005 5th IEEE Conference on Nanotechnology",

address = "United States",

}

Kim, SM, Gokarna, A, Kwack, HS, Kim, BO, Cho, YH, Kim, HJ & Wang, KL 2005, Investigation of the optical and structural characteristics of Ge self-assembled quantum dots grown directly on Si substrates and on strain relaxed Si_0.9Ge_0.1 buffer layers. in 2005 5th IEEE Conference on Nanotechnology., 1500828, 2005 5th IEEE Conference on Nanotechnology, vol. 2, IEEE Computer Society, pp. 569-572, 2005 5th IEEE Conference on Nanotechnology, Nagoya, Japan, 05-07-11. https://doi.org/10.1109/NANO.2005.1500828

Investigation of the optical and structural characteristics of Ge self-assembled quantum dots grown directly on Si substrates and on strain relaxed Si_0.9Ge_0.1 buffer layers. / Kim, Sun Mo; Gokarna, Anisha; Kwack, Ho Sang; Kim, Byoung O.; Cho, Yong Hoon; Kim, H. J.; Wang, K. L.

2005 5th IEEE Conference on Nanotechnology. IEEE Computer Society, 2005. p. 569-572 1500828 (2005 5th IEEE Conference on Nanotechnology; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Kim, Sun Mo

AU - Gokarna, Anisha

AU - Kwack, Ho Sang

AU - Kim, Byoung O.

AU - Cho, Yong Hoon

AU - Kim, H. J.

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N2 - The optical and structural properties of Ge quantum dots (QDs) of varying size grown on Si substrates with and without a partially relaxed Si 0.9Ge0.1 buffer layer, were investigated by means of photoluminescence and atomic force microscopy. A random, bimodal QD size distribution was observed for Ge QDs directly grown on Si substrates, while a well-aligned, unimodal size QD distribution was observed for Ge QDs with the Si0.9Ge0.1 buffer layer. Quantum confinement effects with dot size variation were evident from PL studies. A blue shift of the Ge QD emission energy with increasing excitation power is ascribed to the band bending at the type-II Si/Ge interface.

AB - The optical and structural properties of Ge quantum dots (QDs) of varying size grown on Si substrates with and without a partially relaxed Si 0.9Ge0.1 buffer layer, were investigated by means of photoluminescence and atomic force microscopy. A random, bimodal QD size distribution was observed for Ge QDs directly grown on Si substrates, while a well-aligned, unimodal size QD distribution was observed for Ge QDs with the Si0.9Ge0.1 buffer layer. Quantum confinement effects with dot size variation were evident from PL studies. A blue shift of the Ge QD emission energy with increasing excitation power is ascribed to the band bending at the type-II Si/Ge interface.

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Kim SM, Gokarna A, Kwack HS, Kim BO, Cho YH, Kim HJ et al. Investigation of the optical and structural characteristics of Ge self-assembled quantum dots grown directly on Si substrates and on strain relaxed Si_0.9Ge_0.1 buffer layers. In 2005 5th IEEE Conference on Nanotechnology. IEEE Computer Society. 2005. p. 569-572. 1500828. (2005 5th IEEE Conference on Nanotechnology). https://doi.org/10.1109/NANO.2005.1500828