@inproceedings{bf0b884002bd40338d8e0efaa8f0f65e,
title = "Investigation of the optical and structural characteristics of Ge self-assembled quantum dots grown directly on Si substrates and on strain relaxed Si0.9Ge0.1 buffer layers",
abstract = "The optical and structural properties of Ge quantum dots (QDs) of varying size grown on Si substrates with and without a partially relaxed Si 0.9Ge0.1 buffer layer, were investigated by means of photoluminescence and atomic force microscopy. A random, bimodal QD size distribution was observed for Ge QDs directly grown on Si substrates, while a well-aligned, unimodal size QD distribution was observed for Ge QDs with the Si0.9Ge0.1 buffer layer. Quantum confinement effects with dot size variation were evident from PL studies. A blue shift of the Ge QD emission energy with increasing excitation power is ascribed to the band bending at the type-II Si/Ge interface.",
author = "Kim, {Sun Mo} and Anisha Gokarna and Kwack, {Ho Sang} and Kim, {Byoung O.} and Cho, {Yong Hoon} and Kim, {H. J.} and Wang, {K. L.}",
note = "Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; 2005 5th IEEE Conference on Nanotechnology ; Conference date: 11-07-2005 Through 15-07-2005",
year = "2005",
doi = "10.1109/NANO.2005.1500828",
language = "English",
isbn = "0780391993",
series = "2005 5th IEEE Conference on Nanotechnology",
publisher = "IEEE Computer Society",
pages = "569--572",
booktitle = "2005 5th IEEE Conference on Nanotechnology",
address = "United States",
}