Investigation of the optical and structural characteristics of Ge self-assembled quantum dots grown directly on Si substrates and on strain relaxed Si0.9Ge0.1 buffer layers

Sun Mo Kim; Anisha Gokarna; Ho Sang Kwack; Byoung O. Kim; Yong Hoon Cho; H. J. Kim; K. L. Wang

doi:10.1109/NANO.2005.1500828

Investigation of the optical and structural characteristics of Ge self-assembled quantum dots grown directly on Si substrates and on strain relaxed Si_0.9Ge_0.1 buffer layers

Sun Mo Kim
, Anisha Gokarna
, Ho Sang Kwack
, Byoung O. Kim
, Yong Hoon Cho
, H. J. Kim
, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The optical and structural properties of Ge quantum dots (QDs) of varying size grown on Si substrates with and without a partially relaxed Si _0.9Ge_0.1 buffer layer, were investigated by means of photoluminescence and atomic force microscopy. A random, bimodal QD size distribution was observed for Ge QDs directly grown on Si substrates, while a well-aligned, unimodal size QD distribution was observed for Ge QDs with the Si_0.9Ge_0.1 buffer layer. Quantum confinement effects with dot size variation were evident from PL studies. A blue shift of the Ge QD emission energy with increasing excitation power is ascribed to the band bending at the type-II Si/Ge interface.

Original language	English
Title of host publication	2005 5th IEEE Conference on Nanotechnology
Publisher	IEEE Computer Society
Pages	569-572
Number of pages	4
ISBN (Print)	0780391993, 9780780391994
DOIs	https://doi.org/10.1109/NANO.2005.1500828
Publication status	Published - 2005
Event	2005 5th IEEE Conference on Nanotechnology - Nagoya, Japan Duration: 2005 Jul 11 → 2005 Jul 15

Publication series

Name	2005 5th IEEE Conference on Nanotechnology
Volume	2

Other

Other	2005 5th IEEE Conference on Nanotechnology
Country/Territory	Japan
City	Nagoya
Period	05-07-11 → 05-07-15

All Science Journal Classification (ASJC) codes

General Engineering

Access to Document

10.1109/NANO.2005.1500828

Cite this

Kim, S. M., Gokarna, A., Kwack, H. S., Kim, B. O., Cho, Y. H., Kim, H. J., & Wang, K. L. (2005). Investigation of the optical and structural characteristics of Ge self-assembled quantum dots grown directly on Si substrates and on strain relaxed Si_0.9Ge_0.1 buffer layers. In 2005 5th IEEE Conference on Nanotechnology (pp. 569-572). Article 1500828 (2005 5th IEEE Conference on Nanotechnology; Vol. 2). IEEE Computer Society. https://doi.org/10.1109/NANO.2005.1500828

@inproceedings{bf0b884002bd40338d8e0efaa8f0f65e,

title = "Investigation of the optical and structural characteristics of Ge self-assembled quantum dots grown directly on Si substrates and on strain relaxed Si0.9Ge0.1 buffer layers",

abstract = "The optical and structural properties of Ge quantum dots (QDs) of varying size grown on Si substrates with and without a partially relaxed Si 0.9Ge0.1 buffer layer, were investigated by means of photoluminescence and atomic force microscopy. A random, bimodal QD size distribution was observed for Ge QDs directly grown on Si substrates, while a well-aligned, unimodal size QD distribution was observed for Ge QDs with the Si0.9Ge0.1 buffer layer. Quantum confinement effects with dot size variation were evident from PL studies. A blue shift of the Ge QD emission energy with increasing excitation power is ascribed to the band bending at the type-II Si/Ge interface.",

author = "Kim, \{Sun Mo\} and Anisha Gokarna and Kwack, \{Ho Sang\} and Kim, \{Byoung O.\} and Cho, \{Yong Hoon\} and Kim, \{H. J.\} and Wang, \{K. L.\}",

year = "2005",

doi = "10.1109/NANO.2005.1500828",

language = "English",

isbn = "0780391993",

series = "2005 5th IEEE Conference on Nanotechnology",

publisher = "IEEE Computer Society",

pages = "569--572",

booktitle = "2005 5th IEEE Conference on Nanotechnology",

address = "United States",

}

Kim, SM, Gokarna, A, Kwack, HS, Kim, BO, Cho, YH, Kim, HJ & Wang, KL 2005, Investigation of the optical and structural characteristics of Ge self-assembled quantum dots grown directly on Si substrates and on strain relaxed Si_0.9Ge_0.1 buffer layers. in 2005 5th IEEE Conference on Nanotechnology., 1500828, 2005 5th IEEE Conference on Nanotechnology, vol. 2, IEEE Computer Society, pp. 569-572, 2005 5th IEEE Conference on Nanotechnology, Nagoya, Japan, 05-07-11. https://doi.org/10.1109/NANO.2005.1500828

Investigation of the optical and structural characteristics of Ge self-assembled quantum dots grown directly on Si substrates and on strain relaxed Si_0.9Ge_0.1 buffer layers. / Kim, Sun Mo; Gokarna, Anisha; Kwack, Ho Sang et al.
2005 5th IEEE Conference on Nanotechnology. IEEE Computer Society, 2005. p. 569-572 1500828 (2005 5th IEEE Conference on Nanotechnology; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Kim, Sun Mo

AU - Gokarna, Anisha

AU - Kwack, Ho Sang

AU - Kim, Byoung O.

AU - Cho, Yong Hoon

AU - Kim, H. J.

AU - Wang, K. L.

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N2 - The optical and structural properties of Ge quantum dots (QDs) of varying size grown on Si substrates with and without a partially relaxed Si 0.9Ge0.1 buffer layer, were investigated by means of photoluminescence and atomic force microscopy. A random, bimodal QD size distribution was observed for Ge QDs directly grown on Si substrates, while a well-aligned, unimodal size QD distribution was observed for Ge QDs with the Si0.9Ge0.1 buffer layer. Quantum confinement effects with dot size variation were evident from PL studies. A blue shift of the Ge QD emission energy with increasing excitation power is ascribed to the band bending at the type-II Si/Ge interface.

AB - The optical and structural properties of Ge quantum dots (QDs) of varying size grown on Si substrates with and without a partially relaxed Si 0.9Ge0.1 buffer layer, were investigated by means of photoluminescence and atomic force microscopy. A random, bimodal QD size distribution was observed for Ge QDs directly grown on Si substrates, while a well-aligned, unimodal size QD distribution was observed for Ge QDs with the Si0.9Ge0.1 buffer layer. Quantum confinement effects with dot size variation were evident from PL studies. A blue shift of the Ge QD emission energy with increasing excitation power is ascribed to the band bending at the type-II Si/Ge interface.

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Kim SM, Gokarna A, Kwack HS, Kim BO, Cho YH, Kim HJ et al. Investigation of the optical and structural characteristics of Ge self-assembled quantum dots grown directly on Si substrates and on strain relaxed Si_0.9Ge_0.1 buffer layers. In 2005 5th IEEE Conference on Nanotechnology. IEEE Computer Society. 2005. p. 569-572. 1500828. (2005 5th IEEE Conference on Nanotechnology). doi: 10.1109/NANO.2005.1500828