Investigation of the structural and electrical characterization on ZrO 2 addition for ALD HfO2 with La2O3 capping layer integrated metal-oxide semiconductor capacitors

C. K. Chiang, J. C. Chang, W. H. Liu, C. C. Liu, J. F. Lin, C. L. Yang, J. Y. Wu, S. J. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this work, we report on ZrO2 position effect of ALD HfZrOx gate dielectric with a La2O3 capping layer for gate-first flow. The basic electrical characteristics of devices were compared with different ZrO2 position in HfZrOx dielectric. Experimental results show : (1) Under top La2O 3 capping layer for n-type Metal-Oxide-Silicon capacitor (nMOSCAP) device, ZrO2 position on both of top and bottom in HfZrOx shows higher leakage (<x5) current and Vfb shift (0.18V) to band edge than HfO2 dielectric. (2) For the top La2O 3 cap device, ZrO2 addition into ALD HfO2 can have significant shift on Jg and Vfb. Bottom La 2O3 capping position stack has higher Jg (<x4) and larger Vfb shift (-0.15V) than the top La 2O3 cap position for nMOSCAP device.

Original languageEnglish
Title of host publication2011 IEEE/SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2011
DOIs
Publication statusPublished - 2011
Event2011 22nd Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2011 - Saratoga Springs, NY, United States
Duration: 2011 May 162011 May 18

Publication series

NameASMC (Advanced Semiconductor Manufacturing Conference) Proceedings
ISSN (Print)1078-8743

Other

Other2011 22nd Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2011
Country/TerritoryUnited States
CitySaratoga Springs, NY
Period11-05-1611-05-18

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Engineering(all)
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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