Investigation of thermal effects on the single-finger heterojunction bipolar transistors

K. F. Yarn, Yeong-Her Wang, Mau-phon Houng, B. K. Lew

Research output: Contribution to journalArticle

Abstract

We will first derive a physics-based, analytical single-finger heterojunction bipolar transistor (HBT) model which takes into account the thermal effect. Next, the model is used to calculate the three figures of merit of HBT, i.e., current gain, cut-off frequency and maximum frequency. Their variation against the collector current density under the influence of thermal effect is presented and the calculation results are discussed.

Original languageEnglish
Pages (from-to)521-532
Number of pages12
JournalInternational Journal of Electronics
Volume93
Issue number8
DOIs
Publication statusPublished - 2006 Aug 1

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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