Abstract
Three-terminal GaAs switching devices prepared by molecular beam epitaxy using p+-n--δ(p+)-n--n+ structures are fabricated. The effects of the third-electrode position and the possible voltage-controlled operation on the device performance are discussed. Concepts are proposed to obtain new and improved voltage-controlled properties. The internal barrier of one proposed structure can be modulated directly and is found to be effective for the studied structures. The position of the third-electrode is found to affect the electrical properties profoundly due to different dominant mechanisms. Comparisions are made by defining a control efficiency. Due to the idea of varying the gate position, a conceptual understanding of such a set of results would enhance our understanding of the physics of bulk barrier devices in general.
| Original language | English |
|---|---|
| Pages (from-to) | 485-493 |
| Number of pages | 9 |
| Journal | Applied Physics A Solids and Surfaces |
| Volume | 50 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 1990 May 1 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Engineering(all)
- Physics and Astronomy (miscellaneous)
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Investigation of three-terminal voltage-controlled switching devices prepared by molecular beam epitaxy. / Wang, Yeong-Her; Yarn, K. F.; Chang, C. Y.
In: Applied Physics A Solids and Surfaces, Vol. 50, No. 5, 01.05.1990, p. 485-493.Research output: Contribution to journal › Article
TY - JOUR
T1 - Investigation of three-terminal voltage-controlled switching devices prepared by molecular beam epitaxy
AU - Wang, Yeong-Her
AU - Yarn, K. F.
AU - Chang, C. Y.
PY - 1990/5/1
Y1 - 1990/5/1
N2 - Three-terminal GaAs switching devices prepared by molecular beam epitaxy using p+-n--δ(p+)-n--n+ structures are fabricated. The effects of the third-electrode position and the possible voltage-controlled operation on the device performance are discussed. Concepts are proposed to obtain new and improved voltage-controlled properties. The internal barrier of one proposed structure can be modulated directly and is found to be effective for the studied structures. The position of the third-electrode is found to affect the electrical properties profoundly due to different dominant mechanisms. Comparisions are made by defining a control efficiency. Due to the idea of varying the gate position, a conceptual understanding of such a set of results would enhance our understanding of the physics of bulk barrier devices in general.
AB - Three-terminal GaAs switching devices prepared by molecular beam epitaxy using p+-n--δ(p+)-n--n+ structures are fabricated. The effects of the third-electrode position and the possible voltage-controlled operation on the device performance are discussed. Concepts are proposed to obtain new and improved voltage-controlled properties. The internal barrier of one proposed structure can be modulated directly and is found to be effective for the studied structures. The position of the third-electrode is found to affect the electrical properties profoundly due to different dominant mechanisms. Comparisions are made by defining a control efficiency. Due to the idea of varying the gate position, a conceptual understanding of such a set of results would enhance our understanding of the physics of bulk barrier devices in general.
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U2 - 10.1007/BF00324572
DO - 10.1007/BF00324572
M3 - Article
VL - 50
SP - 485
EP - 493
JO - Applied Physics A: Solids and Surfaces
JF - Applied Physics A: Solids and Surfaces
SN - 0721-7250
IS - 5
ER -