Investigation of three-terminal voltage-controlled switching devices prepared by molecular beam epitaxy

Yeong-Her Wang, K. F. Yarn, C. Y. Chang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Three-terminal GaAs switching devices prepared by molecular beam epitaxy using p+-n--δ(p+)-n--n+ structures are fabricated. The effects of the third-electrode position and the possible voltage-controlled operation on the device performance are discussed. Concepts are proposed to obtain new and improved voltage-controlled properties. The internal barrier of one proposed structure can be modulated directly and is found to be effective for the studied structures. The position of the third-electrode is found to affect the electrical properties profoundly due to different dominant mechanisms. Comparisions are made by defining a control efficiency. Due to the idea of varying the gate position, a conceptual understanding of such a set of results would enhance our understanding of the physics of bulk barrier devices in general.

Original languageEnglish
Pages (from-to)485-493
Number of pages9
JournalApplied Physics A Solids and Surfaces
Volume50
Issue number5
DOIs
Publication statusPublished - 1990 May 1

Fingerprint

Molecular beam epitaxy
molecular beam epitaxy
Electrodes
Electric potential
electric potential
Electric properties
electrodes
Physics
electrical properties
physics
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy (miscellaneous)

Cite this

@article{5484bd6e5c7243f49b3978e12aed29e9,
title = "Investigation of three-terminal voltage-controlled switching devices prepared by molecular beam epitaxy",
abstract = "Three-terminal GaAs switching devices prepared by molecular beam epitaxy using p+-n--δ(p+)-n--n+ structures are fabricated. The effects of the third-electrode position and the possible voltage-controlled operation on the device performance are discussed. Concepts are proposed to obtain new and improved voltage-controlled properties. The internal barrier of one proposed structure can be modulated directly and is found to be effective for the studied structures. The position of the third-electrode is found to affect the electrical properties profoundly due to different dominant mechanisms. Comparisions are made by defining a control efficiency. Due to the idea of varying the gate position, a conceptual understanding of such a set of results would enhance our understanding of the physics of bulk barrier devices in general.",
author = "Yeong-Her Wang and Yarn, {K. F.} and Chang, {C. Y.}",
year = "1990",
month = "5",
day = "1",
doi = "10.1007/BF00324572",
language = "English",
volume = "50",
pages = "485--493",
journal = "Applied Physics A: Solids and Surfaces",
issn = "0721-7250",
publisher = "Springer Verlag",
number = "5",

}

Investigation of three-terminal voltage-controlled switching devices prepared by molecular beam epitaxy. / Wang, Yeong-Her; Yarn, K. F.; Chang, C. Y.

In: Applied Physics A Solids and Surfaces, Vol. 50, No. 5, 01.05.1990, p. 485-493.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Investigation of three-terminal voltage-controlled switching devices prepared by molecular beam epitaxy

AU - Wang, Yeong-Her

AU - Yarn, K. F.

AU - Chang, C. Y.

PY - 1990/5/1

Y1 - 1990/5/1

N2 - Three-terminal GaAs switching devices prepared by molecular beam epitaxy using p+-n--δ(p+)-n--n+ structures are fabricated. The effects of the third-electrode position and the possible voltage-controlled operation on the device performance are discussed. Concepts are proposed to obtain new and improved voltage-controlled properties. The internal barrier of one proposed structure can be modulated directly and is found to be effective for the studied structures. The position of the third-electrode is found to affect the electrical properties profoundly due to different dominant mechanisms. Comparisions are made by defining a control efficiency. Due to the idea of varying the gate position, a conceptual understanding of such a set of results would enhance our understanding of the physics of bulk barrier devices in general.

AB - Three-terminal GaAs switching devices prepared by molecular beam epitaxy using p+-n--δ(p+)-n--n+ structures are fabricated. The effects of the third-electrode position and the possible voltage-controlled operation on the device performance are discussed. Concepts are proposed to obtain new and improved voltage-controlled properties. The internal barrier of one proposed structure can be modulated directly and is found to be effective for the studied structures. The position of the third-electrode is found to affect the electrical properties profoundly due to different dominant mechanisms. Comparisions are made by defining a control efficiency. Due to the idea of varying the gate position, a conceptual understanding of such a set of results would enhance our understanding of the physics of bulk barrier devices in general.

UR - http://www.scopus.com/inward/record.url?scp=0025432221&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025432221&partnerID=8YFLogxK

U2 - 10.1007/BF00324572

DO - 10.1007/BF00324572

M3 - Article

VL - 50

SP - 485

EP - 493

JO - Applied Physics A: Solids and Surfaces

JF - Applied Physics A: Solids and Surfaces

SN - 0721-7250

IS - 5

ER -