Investigation of three-terminal voltage-controlled switching devices prepared by molecular beam epitaxy

Y. H. Wang, K. F. Yarn, C. Y. Chang

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Three-terminal GaAs switching devices prepared by molecular beam epitaxy using p+-n--δ(p+)-n--n+ structures are fabricated. The effects of the third-electrode position and the possible voltage-controlled operation on the device performance are discussed. Concepts are proposed to obtain new and improved voltage-controlled properties. The internal barrier of one proposed structure can be modulated directly and is found to be effective for the studied structures. The position of the third-electrode is found to affect the electrical properties profoundly due to different dominant mechanisms. Comparisions are made by defining a control efficiency. Due to the idea of varying the gate position, a conceptual understanding of such a set of results would enhance our understanding of the physics of bulk barrier devices in general.

Original languageEnglish
Pages (from-to)485-493
Number of pages9
JournalApplied Physics A Solids and Surfaces
Volume50
Issue number5
DOIs
Publication statusPublished - 1990 May 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy (miscellaneous)

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