Investigation of TiO 2 on AlGaAs prepared by liquid phase deposition and its application

Kuan Wei Lee, Jung Sheng Huang, Yu Lin Lu, Fang Ming Lee, Hsien Cheng Lin, Tsu Yi Wu, Yeong Her Wang

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The study explored titanium dioxide (TiO 2) on aluminum gallium arsenide (AlGaAs) prepared by liquid phase deposition (LPD) at 40 °C. The leakage current density was about 8.4 × 10 -6 A/cm 2 at 1 MV/cm. The interface trap density (D it) and the flat-band voltage shift (ΔV FB) were 2.3 × 10 12 cm -2 eV -1 and 1.2 V, respectively. After rapid thermal annealing (RTA) in the ambient N 2 at 350 °C for 1 min, the leakage current density, D it, and ΔV FB were improved to 2.4 × 10 -6 A/cm 2 at 1 MV/cm, 7.3 × 10 11 cm -2 eV -1, and 1.0 V, respectively. Finally, the study demonstrates the application to the AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT). The results indicate the potential of the proposed device with a LPD-TiO 2 gate oxide for power application.

Original languageEnglish
Pages (from-to)85-89
Number of pages5
JournalSolid-State Electronics
Volume68
DOIs
Publication statusPublished - 2012 Feb 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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