The study explored titanium dioxide (TiO 2) on aluminum gallium arsenide (AlGaAs) prepared by liquid phase deposition (LPD) at 40 °C. The leakage current density was about 8.4 × 10 -6 A/cm 2 at 1 MV/cm. The interface trap density (D it) and the flat-band voltage shift (ΔV FB) were 2.3 × 10 12 cm -2 eV -1 and 1.2 V, respectively. After rapid thermal annealing (RTA) in the ambient N 2 at 350 °C for 1 min, the leakage current density, D it, and ΔV FB were improved to 2.4 × 10 -6 A/cm 2 at 1 MV/cm, 7.3 × 10 11 cm -2 eV -1, and 1.0 V, respectively. Finally, the study demonstrates the application to the AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT). The results indicate the potential of the proposed device with a LPD-TiO 2 gate oxide for power application.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry