Investigation of transport mechanism for strained Si n metal-oxide- semiconductor field-effect transistor grown on multi-layer substrate

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Transport Mechanism 100%
• Tensiles 50%
• Surface Defect 50%
• Cap Layer 50%
• Layer Thickness 50%
• Tensile Strain 50%
• Current Drive 50%
• Channel Length 50%
• Threading Dislocation 50%
• Laminate 50%
• Dislocation Formation 50%

Material Science

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Multilayer 100%
• Film 50%
• Tensile Strain 50%
• Surface Defect 50%
• Laminate 50%

Keyphrases

• Strain Relief 25%
• Large Channel 25%