Investigation of trap properties in high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors with aluminum ion implantation using random telegraph noise analysis

Tsung Hsien Kao, Shoou Jinn Chang, Yean Kuen Fang, Po Chin Huang, Chien Ming Lai, Chia Wei Hsu, Yi Wen Chen, Osbert Cheng, Chung Yi Wu, San Lein Wu

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Abstract

In this study, the impact of aluminum ion implantation (Al I/I) on random telegraph noise (RTN) in high-k/metal gate (HK/MG) p-type metal-oxide- semiconductor field-effect-transistors (pMOSFETs) was investigated. The trap parameters of HK/MG pMOSFETs with Al I/I, such as trap energy level, capture time and emission time, activation energies for capture and emission, and trap location in the gate dielectric, were determined. The configuration coordinate diagram was also established. It was observed that the implanted Al could fill defects and form a thin Al2O3 layer and thus increase the tunneling barrier height for holes. It was also observed that the trap position in the Al I/I samples was lower due to the Al I/I-induced dipole at the HfO 2/SiO2 interface.

Original languageEnglish
Article number062109
JournalApplied Physics Letters
Volume105
Issue number6
DOIs
Publication statusPublished - 2014 Aug 11

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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