Investigation of trap properties of Hf0.83Zr 0.17O2 high-k gate stack p-type MOSFETs by low-frequency (1/f ) noise and random telegraph noise analyses

Shih Chang Tsai, San Lein Wu, Po Chin Huang, Bo Chin Wang, Kai Shiang Tsai, Tsung Hsien Kao, Chih Wei Yang, Cheng Guo Chen, Osbert Cheng, Yean Kuen Fang, Shoou Jinn Chang, Jone Fang Chen

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2 Citations (Scopus)

Abstract

In this study, the trap properties of composite Hf0.83Zr 0.17O2 high-k gate stack p-type MOSFETs (pMOSFETs) were investigated by simultaneous low-frequency (1/f ) noise and random telegraph noise measurements. Compared with pure ZrO2 pMOSFETs, the interface property and drive current of Hf0.83Zr0.17O2 pMOSFETs were both improved, and the depth of the effective centroid of the fixed charges was close to the insulator/ semiconductor interface. This result indicated that the trapping behavior of hole capture from a ZrO2 film can be suppressed by mixing the film with a HfO2 film. Consequently, comparable oxide trap densities and trapping depths between Hf 0.83Zr0.17O2 and HfO2 pMOSFETs can be seen. In addition, it was found that the unified model can appropriately interpret the 1/f noise mechanism in Hf0.83Zr0.17O 2 pMOSFETs.

Original languageEnglish
Article number08LB03
JournalJapanese Journal of Applied Physics
Volume53
Issue number8 SPEC. ISSUE 1
DOIs
Publication statusPublished - 2014 Aug

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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