Investigation of valence-band splitting in InN by low-temperature photoreflectance spectroscopy

Kuang I. Lin, Yen Jen Chen, Yung Chen Cheng, Shangjr Gwo

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Temperature-dependent photoluminescence (PL) and photore flectance (PR) spectroscopy and room-temperature Raman spectroscopy and X-ray diffraction have been utilized to investigate the optical properties, electron concentration, crystalline quality, and electronic band structures, especially valence-band splittings, of InN films grown by plasma-assisted molecular beam epitaxy (PAMBE) and metal-organic chemical vapor deposition (MOCVD). The smaller thermal activation energies imply the PAMBE-grown InN film exhibits low-density localized states from band tail states. PR signals of the InN film are detectable when the temperature is below about 100K due to the cooling down of free electrons to trap states. For the MOCVD-grown InN film, no PR signal is observed even at 15K due to the higher free electron concentration. To analyze the energetic positions of the features in the PR spectra without ambiguity, the moduli of individual PR resonances are considered. Based on the PR results and appropriate Hamiltonian, the values of the crystal-field splitting and the spin-orbit splitting in InN are experimentally determined as 26.8 and 14.5meV, respectively. Theoretical and experimental reports are compared and discussed to verify this result.

Original languageEnglish
Article number031001
JournalJapanese Journal of Applied Physics
Volume54
Issue number3
DOIs
Publication statusPublished - 2015 Mar 1

Fingerprint

Valence bands
Spectroscopy
valence
Organic chemicals
Molecular beam epitaxy
spectroscopy
free electrons
metalorganic chemical vapor deposition
Electrons
Chemical vapor deposition
molecular beam epitaxy
Plasmas
Hamiltonians
Temperature
Metals
Band structure
ambiguity
crystal field theory
Raman spectroscopy
Photoluminescence

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

@article{ffe0103c48974615a85a286b005a3008,
title = "Investigation of valence-band splitting in InN by low-temperature photoreflectance spectroscopy",
abstract = "Temperature-dependent photoluminescence (PL) and photore flectance (PR) spectroscopy and room-temperature Raman spectroscopy and X-ray diffraction have been utilized to investigate the optical properties, electron concentration, crystalline quality, and electronic band structures, especially valence-band splittings, of InN films grown by plasma-assisted molecular beam epitaxy (PAMBE) and metal-organic chemical vapor deposition (MOCVD). The smaller thermal activation energies imply the PAMBE-grown InN film exhibits low-density localized states from band tail states. PR signals of the InN film are detectable when the temperature is below about 100K due to the cooling down of free electrons to trap states. For the MOCVD-grown InN film, no PR signal is observed even at 15K due to the higher free electron concentration. To analyze the energetic positions of the features in the PR spectra without ambiguity, the moduli of individual PR resonances are considered. Based on the PR results and appropriate Hamiltonian, the values of the crystal-field splitting and the spin-orbit splitting in InN are experimentally determined as 26.8 and 14.5meV, respectively. Theoretical and experimental reports are compared and discussed to verify this result.",
author = "Lin, {Kuang I.} and Chen, {Yen Jen} and Cheng, {Yung Chen} and Shangjr Gwo",
year = "2015",
month = "3",
day = "1",
doi = "10.7567/JJAP.54.031001",
language = "English",
volume = "54",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "3",

}

Investigation of valence-band splitting in InN by low-temperature photoreflectance spectroscopy. / Lin, Kuang I.; Chen, Yen Jen; Cheng, Yung Chen; Gwo, Shangjr.

In: Japanese Journal of Applied Physics, Vol. 54, No. 3, 031001, 01.03.2015.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Investigation of valence-band splitting in InN by low-temperature photoreflectance spectroscopy

AU - Lin, Kuang I.

AU - Chen, Yen Jen

AU - Cheng, Yung Chen

AU - Gwo, Shangjr

PY - 2015/3/1

Y1 - 2015/3/1

N2 - Temperature-dependent photoluminescence (PL) and photore flectance (PR) spectroscopy and room-temperature Raman spectroscopy and X-ray diffraction have been utilized to investigate the optical properties, electron concentration, crystalline quality, and electronic band structures, especially valence-band splittings, of InN films grown by plasma-assisted molecular beam epitaxy (PAMBE) and metal-organic chemical vapor deposition (MOCVD). The smaller thermal activation energies imply the PAMBE-grown InN film exhibits low-density localized states from band tail states. PR signals of the InN film are detectable when the temperature is below about 100K due to the cooling down of free electrons to trap states. For the MOCVD-grown InN film, no PR signal is observed even at 15K due to the higher free electron concentration. To analyze the energetic positions of the features in the PR spectra without ambiguity, the moduli of individual PR resonances are considered. Based on the PR results and appropriate Hamiltonian, the values of the crystal-field splitting and the spin-orbit splitting in InN are experimentally determined as 26.8 and 14.5meV, respectively. Theoretical and experimental reports are compared and discussed to verify this result.

AB - Temperature-dependent photoluminescence (PL) and photore flectance (PR) spectroscopy and room-temperature Raman spectroscopy and X-ray diffraction have been utilized to investigate the optical properties, electron concentration, crystalline quality, and electronic band structures, especially valence-band splittings, of InN films grown by plasma-assisted molecular beam epitaxy (PAMBE) and metal-organic chemical vapor deposition (MOCVD). The smaller thermal activation energies imply the PAMBE-grown InN film exhibits low-density localized states from band tail states. PR signals of the InN film are detectable when the temperature is below about 100K due to the cooling down of free electrons to trap states. For the MOCVD-grown InN film, no PR signal is observed even at 15K due to the higher free electron concentration. To analyze the energetic positions of the features in the PR spectra without ambiguity, the moduli of individual PR resonances are considered. Based on the PR results and appropriate Hamiltonian, the values of the crystal-field splitting and the spin-orbit splitting in InN are experimentally determined as 26.8 and 14.5meV, respectively. Theoretical and experimental reports are compared and discussed to verify this result.

UR - http://www.scopus.com/inward/record.url?scp=84924263354&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84924263354&partnerID=8YFLogxK

U2 - 10.7567/JJAP.54.031001

DO - 10.7567/JJAP.54.031001

M3 - Article

AN - SCOPUS:84924263354

VL - 54

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 3

M1 - 031001

ER -