Investigation of zinc-tin-oxide thin-film transistors with varying SnO2 contents

Po Jui Kuo, Sheng Po Chang, Shoou-Jinn Chang

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Zinc tin oxide (ZTO) thin-film transistors (TFTs) were prepared on a glass substrate by deposition using radio frequency (RF) magnetron co-sputtering, followed by annealing at 300°C for 20 min. The properties of ZTO thin films were found to be dependent on the atomic compositional ratio of Zn:Sn; the device performance and operational stability of the fabricated ZTO TFTs, including the mobility, on-off current ratio, threshold voltage, and subthreshold slope, were strongly influenced by the Sn content. Better TFT performance was achieved when the Sn content in the ZTO thin film was low, and the optimal mobility was 18 cm2 V-1 s-1, threshold voltage was 0.5 V, and subthreshold slope was 0.227 V·dec-1. Notably, the device performance and operational stability of the RF magnetron co-sputtered ZTO TFTs could be improved by optimizing the Zn:Sn atomic compositional ratio in the films.

Original languageEnglish
Pages (from-to)89-94
Number of pages6
JournalElectronic Materials Letters
Volume10
Issue number1
DOIs
Publication statusPublished - 2014 Feb 5

Fingerprint

Thin film transistors
Zinc oxide
Tin oxides
Oxide films
Threshold voltage
Thin films
Sputtering
stannic oxide
Annealing
Glass
Substrates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

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abstract = "Zinc tin oxide (ZTO) thin-film transistors (TFTs) were prepared on a glass substrate by deposition using radio frequency (RF) magnetron co-sputtering, followed by annealing at 300°C for 20 min. The properties of ZTO thin films were found to be dependent on the atomic compositional ratio of Zn:Sn; the device performance and operational stability of the fabricated ZTO TFTs, including the mobility, on-off current ratio, threshold voltage, and subthreshold slope, were strongly influenced by the Sn content. Better TFT performance was achieved when the Sn content in the ZTO thin film was low, and the optimal mobility was 18 cm2 V-1 s-1, threshold voltage was 0.5 V, and subthreshold slope was 0.227 V·dec-1. Notably, the device performance and operational stability of the RF magnetron co-sputtered ZTO TFTs could be improved by optimizing the Zn:Sn atomic compositional ratio in the films.",
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Investigation of zinc-tin-oxide thin-film transistors with varying SnO2 contents. / Kuo, Po Jui; Chang, Sheng Po; Chang, Shoou-Jinn.

In: Electronic Materials Letters, Vol. 10, No. 1, 05.02.2014, p. 89-94.

Research output: Contribution to journalArticle

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