Investigation of ZnO:In nanorods deposited by vapor cooling condensation method

Ming Kai Wang; Wei Hsiang Huang; Hsin Ying Lee; Ching Ting Lee

doi:10.1109/TENCON.2007.4428822

Investigation of ZnO:In nanorods deposited by vapor cooling condensation method

Ming Kai Wang, Wei Hsiang Huang, Hsin Ying Lee, Ching Ting Lee

Department of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

To improve the electrical conductivity of ZnO nanorods, indium-doped ZnO (ZnO:In) is a promising structure. ZnO:In nanorods were grown using vapor cooling condensation method at low temperature through anodic alumina membranes (AAM) in a thermal coater. With assistance of liquid nitrogen cooling system to cool the substrate and vacuum pumping system to provide the molecular rising force, the uniform and isotropy one-dimension ZnO nanostructure can be obtained by overcoming the obstructing problem of the AAM pores. The diameter and length of ZnO:In nanorods observed by SEM are about 200 nm and 100 nm, repectively. As a result of Photoluminescence (PL) measurements, the difference of optical property between ZnO and ZnO:In nanorods can be observed.

Original language	English
Title of host publication	TENCON 2007 - 2007 IEEE Region 10 Conference
DOIs	https://doi.org/10.1109/TENCON.2007.4428822
Publication status	Published - 2007
Event	IEEE Region 10 Conference, TENCON 2007 - Taipei, Taiwan Duration: 2007 Oct 30 → 2007 Nov 2

Publication series

Name	IEEE Region 10 Annual International Conference, Proceedings/TENCON

Other

Other	IEEE Region 10 Conference, TENCON 2007
Country/Territory	Taiwan
City	Taipei
Period	07-10-30 → 07-11-02

All Science Journal Classification (ASJC) codes

Computer Science Applications
Electrical and Electronic Engineering

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10.1109/TENCON.2007.4428822

Cite this

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title = "Investigation of ZnO:In nanorods deposited by vapor cooling condensation method",

abstract = "To improve the electrical conductivity of ZnO nanorods, indium-doped ZnO (ZnO:In) is a promising structure. ZnO:In nanorods were grown using vapor cooling condensation method at low temperature through anodic alumina membranes (AAM) in a thermal coater. With assistance of liquid nitrogen cooling system to cool the substrate and vacuum pumping system to provide the molecular rising force, the uniform and isotropy one-dimension ZnO nanostructure can be obtained by overcoming the obstructing problem of the AAM pores. The diameter and length of ZnO:In nanorods observed by SEM are about 200 nm and 100 nm, repectively. As a result of Photoluminescence (PL) measurements, the difference of optical property between ZnO and ZnO:In nanorods can be observed.",

author = "Wang, {Ming Kai} and Huang, {Wei Hsiang} and Lee, {Hsin Ying} and Lee, {Ching Ting}",

year = "2007",

doi = "10.1109/TENCON.2007.4428822",

language = "English",

isbn = "1424412722",

series = "IEEE Region 10 Annual International Conference, Proceedings/TENCON",

booktitle = "TENCON 2007 - 2007 IEEE Region 10 Conference",

note = "IEEE Region 10 Conference, TENCON 2007 ; Conference date: 30-10-2007 Through 02-11-2007",

}

TY - GEN

T1 - Investigation of ZnO:In nanorods deposited by vapor cooling condensation method

AU - Wang, Ming Kai

AU - Huang, Wei Hsiang

AU - Lee, Hsin Ying

AU - Lee, Ching Ting

PY - 2007

Y1 - 2007

N2 - To improve the electrical conductivity of ZnO nanorods, indium-doped ZnO (ZnO:In) is a promising structure. ZnO:In nanorods were grown using vapor cooling condensation method at low temperature through anodic alumina membranes (AAM) in a thermal coater. With assistance of liquid nitrogen cooling system to cool the substrate and vacuum pumping system to provide the molecular rising force, the uniform and isotropy one-dimension ZnO nanostructure can be obtained by overcoming the obstructing problem of the AAM pores. The diameter and length of ZnO:In nanorods observed by SEM are about 200 nm and 100 nm, repectively. As a result of Photoluminescence (PL) measurements, the difference of optical property between ZnO and ZnO:In nanorods can be observed.

AB - To improve the electrical conductivity of ZnO nanorods, indium-doped ZnO (ZnO:In) is a promising structure. ZnO:In nanorods were grown using vapor cooling condensation method at low temperature through anodic alumina membranes (AAM) in a thermal coater. With assistance of liquid nitrogen cooling system to cool the substrate and vacuum pumping system to provide the molecular rising force, the uniform and isotropy one-dimension ZnO nanostructure can be obtained by overcoming the obstructing problem of the AAM pores. The diameter and length of ZnO:In nanorods observed by SEM are about 200 nm and 100 nm, repectively. As a result of Photoluminescence (PL) measurements, the difference of optical property between ZnO and ZnO:In nanorods can be observed.

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U2 - 10.1109/TENCON.2007.4428822

DO - 10.1109/TENCON.2007.4428822

M3 - Conference contribution

AN - SCOPUS:48649109312

SN - 1424412722

SN - 9781424412723

T3 - IEEE Region 10 Annual International Conference, Proceedings/TENCON

BT - TENCON 2007 - 2007 IEEE Region 10 Conference

T2 - IEEE Region 10 Conference, TENCON 2007

Y2 - 30 October 2007 through 2 November 2007

ER -

Investigation of ZnO:In nanorods deposited by vapor cooling condensation method

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