To improve the electrical conductivity of ZnO nanorods, indium-doped ZnO (ZnO:In) is a promising structure. ZnO:In nanorods were grown using vapor cooling condensation method at low temperature through anodic alumina membranes (AAM) in a thermal coater. With assistance of liquid nitrogen cooling system to cool the substrate and vacuum pumping system to provide the molecular rising force, the uniform and isotropy one-dimension ZnO nanostructure can be obtained by overcoming the obstructing problem of the AAM pores. The diameter and length of ZnO:In nanorods observed by SEM are about 200 nm and 100 nm, repectively. As a result of Photoluminescence (PL) measurements, the difference of optical property between ZnO and ZnO:In nanorods can be observed.