Investigation on a Pd-AlGaN/GaN Schottky diode-type hydrogen sensor with ultrahigh sensing responses

Tsung Han Tsai, Huey Ing Chen, I. Ping Liu, Ching Wen Hung, Tzu Pin Chen, Li Yang Chen, Yi Jung Liu, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

An interesting Pd-AlGaN/GaN Schottky diode-type hydrogen sensor with ultrahigh sensing responses is fabricated and studied. A sensing response (SF) 2.04 × 105 and a widespread Schottky barrier height variation (ΔφB) of 400 meV are observed upon exposure to a 9660 ppm H2/air gas at 150 °C. The high sensing response can be attributed to the catalytic capability of Pd metal with contributions from a high-density 2-D electron gas induced from spontaneous and piezoelectric polarizations. From a Langmuir isotherm, the equilibrium constants are found to be 1.9 and 0.7 torr-1 at 150 °C and 200 °C, respectively. The fast response and recovery times (< 10 s) are found under a 9660 ppm H2/air gas. Consequently, the compatible process of the AlGaN/GaN sensor makes it possible to be integrated into other high-sensing performance sensor for microelectrical and mechanical applications.

Original languageEnglish
Pages (from-to)3575-3581
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume55
Issue number12
DOIs
Publication statusPublished - 2008 Dec 10

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Investigation on a Pd-AlGaN/GaN Schottky diode-type hydrogen sensor with ultrahigh sensing responses'. Together they form a unique fingerprint.

Cite this