Thermal treatment with different gas environment before the Al2O3 ALD passivation process plays a key role to the presence of blistering. The specific silanol group vibration peaks in FT-IR spectra confirm the mechanism of the blistering free surface formation. The blistering affects not only the appearance but also the implied Voc of the cells, that is to say, the quality of the passivation . The hydrogen containing species (by-product of the ALD process) will bond to the SiO2 (both Si and O atom site) which grows after the thermal treatment with oxygen. Due to the good diffusivity within the SiO2 layer, the amount of hydrogen out-diffusing towards the SiNX ARC layer after firing can be reduced to achieve blistering free silicon solar cells.
|Number of pages||5|
|Publication status||Published - 2015 Jan 1|
|Event||5th International Conference on Silicon Photovoltaics, SiliconPV 2015 - Konstanz, Germany|
Duration: 2015 Mar 25 → 2015 Mar 27
All Science Journal Classification (ASJC) codes