Investigation on Blistering Behavior for n-type Silicon Solar Cells

Zih Wei Peng, Po Tsung Hsieh, Yuan Jun Lin, Chih Jeng Huang, Chi Chun Li

Research output: Contribution to journalConference articlepeer-review

12 Citations (Scopus)


Thermal treatment with different gas environment before the Al2O3 ALD passivation process plays a key role to the presence of blistering. The specific silanol group vibration peaks in FT-IR spectra confirm the mechanism of the blistering free surface formation. The blistering affects not only the appearance but also the implied Voc of the cells, that is to say, the quality of the passivation [10]. The hydrogen containing species (by-product of the ALD process) will bond to the SiO2 (both Si and O atom site) which grows after the thermal treatment with oxygen. Due to the good diffusivity within the SiO2 layer, the amount of hydrogen out-diffusing towards the SiNX ARC layer after firing can be reduced to achieve blistering free silicon solar cells.

Original languageEnglish
Pages (from-to)827-831
Number of pages5
JournalEnergy Procedia
Publication statusPublished - 2015 Jan 1
Event5th International Conference on Silicon Photovoltaics, SiliconPV 2015 - Konstanz, Germany
Duration: 2015 Mar 252015 Mar 27

All Science Journal Classification (ASJC) codes

  • General Energy


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