Investigation on Blistering Behavior for n-type Silicon Solar Cells

Zih Wei Peng; Po Tsung Hsieh; Yuan Jun Lin; Chih Jeng Huang; Chi Chun Li

doi:10.1016/j.egypro.2015.07.117

Investigation on Blistering Behavior for n-type Silicon Solar Cells

Zih Wei Peng, Po Tsung Hsieh, Yuan Jun Lin, Chih Jeng Huang, Chi Chun Li

Education and Research Group

Research output: Contribution to journal › Conference article › peer-review

17 Citations (Scopus)

Abstract

Thermal treatment with different gas environment before the Al₂O₃ ALD passivation process plays a key role to the presence of blistering. The specific silanol group vibration peaks in FT-IR spectra confirm the mechanism of the blistering free surface formation. The blistering affects not only the appearance but also the implied Voc of the cells, that is to say, the quality of the passivation [10]. The hydrogen containing species (by-product of the ALD process) will bond to the SiO₂ (both Si and O atom site) which grows after the thermal treatment with oxygen. Due to the good diffusivity within the SiO₂ layer, the amount of hydrogen out-diffusing towards the SiN_X ARC layer after firing can be reduced to achieve blistering free silicon solar cells.

Original language	English
Pages (from-to)	827-831
Number of pages	5
Journal	Energy Procedia
Volume	77
DOIs	https://doi.org/10.1016/j.egypro.2015.07.117
Publication status	Published - 2015 Jan 1
Event	5th International Conference on Silicon Photovoltaics, SiliconPV 2015 - Konstanz, Germany Duration: 2015 Mar 25 → 2015 Mar 27

All Science Journal Classification (ASJC) codes

General Energy

Access to Document

10.1016/j.egypro.2015.07.117

Cite this

@article{be2c4dd76ad54b5096726ba1d9b074f9,

title = "Investigation on Blistering Behavior for n-type Silicon Solar Cells",

abstract = "Thermal treatment with different gas environment before the Al2O3 ALD passivation process plays a key role to the presence of blistering. The specific silanol group vibration peaks in FT-IR spectra confirm the mechanism of the blistering free surface formation. The blistering affects not only the appearance but also the implied Voc of the cells, that is to say, the quality of the passivation [10]. The hydrogen containing species (by-product of the ALD process) will bond to the SiO2 (both Si and O atom site) which grows after the thermal treatment with oxygen. Due to the good diffusivity within the SiO2 layer, the amount of hydrogen out-diffusing towards the SiNX ARC layer after firing can be reduced to achieve blistering free silicon solar cells.",

author = "Peng, {Zih Wei} and Hsieh, {Po Tsung} and Lin, {Yuan Jun} and Huang, {Chih Jeng} and Li, {Chi Chun}",

year = "2015",

month = jan,

day = "1",

doi = "10.1016/j.egypro.2015.07.117",

language = "English",

volume = "77",

pages = "827--831",

journal = "Energy Procedia",

issn = "1876-6102",

publisher = "Elsevier BV",

note = "5th International Conference on Silicon Photovoltaics, SiliconPV 2015 ; Conference date: 25-03-2015 Through 27-03-2015",

}

TY - JOUR

T1 - Investigation on Blistering Behavior for n-type Silicon Solar Cells

AU - Peng, Zih Wei

AU - Hsieh, Po Tsung

AU - Lin, Yuan Jun

AU - Huang, Chih Jeng

AU - Li, Chi Chun

PY - 2015/1/1

Y1 - 2015/1/1

N2 - Thermal treatment with different gas environment before the Al2O3 ALD passivation process plays a key role to the presence of blistering. The specific silanol group vibration peaks in FT-IR spectra confirm the mechanism of the blistering free surface formation. The blistering affects not only the appearance but also the implied Voc of the cells, that is to say, the quality of the passivation [10]. The hydrogen containing species (by-product of the ALD process) will bond to the SiO2 (both Si and O atom site) which grows after the thermal treatment with oxygen. Due to the good diffusivity within the SiO2 layer, the amount of hydrogen out-diffusing towards the SiNX ARC layer after firing can be reduced to achieve blistering free silicon solar cells.

AB - Thermal treatment with different gas environment before the Al2O3 ALD passivation process plays a key role to the presence of blistering. The specific silanol group vibration peaks in FT-IR spectra confirm the mechanism of the blistering free surface formation. The blistering affects not only the appearance but also the implied Voc of the cells, that is to say, the quality of the passivation [10]. The hydrogen containing species (by-product of the ALD process) will bond to the SiO2 (both Si and O atom site) which grows after the thermal treatment with oxygen. Due to the good diffusivity within the SiO2 layer, the amount of hydrogen out-diffusing towards the SiNX ARC layer after firing can be reduced to achieve blistering free silicon solar cells.

UR - http://www.scopus.com/inward/record.url?scp=84948406598&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84948406598&partnerID=8YFLogxK

U2 - 10.1016/j.egypro.2015.07.117

DO - 10.1016/j.egypro.2015.07.117

M3 - Conference article

AN - SCOPUS:84948406598

SN - 1876-6102

VL - 77

SP - 827

EP - 831

JO - Energy Procedia

JF - Energy Procedia

T2 - 5th International Conference on Silicon Photovoltaics, SiliconPV 2015

Y2 - 25 March 2015 through 27 March 2015

ER -

Investigation on Blistering Behavior for n-type Silicon Solar Cells

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this