TY - JOUR
T1 - Investigation on electronic properties of semiconductor delta-doped structures
AU - Liu, Wen Chau
AU - Sun, Chung Yih
AU - Lour, Wen Shiung
N1 - Funding Information:
Acknowledgementa-Tahuet horswish to think Miss H.R. Sze for her kind assistancdeu ringt his study.P art of this work was sponsorebdy NationaSl cienceC ouncil of the Republic of China under Contract No. NSC79-0404-E006-10.
PY - 1991
Y1 - 1991
N2 - The electronic properties of GaAs delta structures, including the quantized subband energies, real space widths, and carrier concentrations in subbands, have been analyzed and simulated by an Airy function and a modified method, respectively. The modified analysis method takes into account the free carrier effects in the quantized subbands, and gives a more precise calculation. Our calculated results agree with experimental data.
AB - The electronic properties of GaAs delta structures, including the quantized subband energies, real space widths, and carrier concentrations in subbands, have been analyzed and simulated by an Airy function and a modified method, respectively. The modified analysis method takes into account the free carrier effects in the quantized subbands, and gives a more precise calculation. Our calculated results agree with experimental data.
UR - http://www.scopus.com/inward/record.url?scp=0025754628&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0025754628&partnerID=8YFLogxK
U2 - 10.1016/0749-6036(91)90141-D
DO - 10.1016/0749-6036(91)90141-D
M3 - Article
AN - SCOPUS:0025754628
SN - 0749-6036
VL - 10
SP - 19
EP - 26
JO - Superlattices and Microstructures
JF - Superlattices and Microstructures
IS - 1
ER -