Investigation on heterostructural optoelectronic switches

Der Feng Guo, Jung Hui Tsai, Tzu Yen Weng, Chih Hung Yeng, Po Hsien Lai, Ssu Yi Fu, Ching Wen Hung, Wen-Chau Liu

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


GaAs/InGaP and AlGaAs/GaAs/InAlGaP npn heterostructural optoelectronic switches (HSOSs) have been fabricated to demonstrate the bulk-barrier and potential-spike height effects on the switching. It is seen that the illumination decreases the switching voltage VS and increases the switching current IS in the GaAs/InGaP HSOS characteristics. But in the AlGaAs/GaAs/InAlGaP HSOS, the VS and IS present contrary trends. These characteristic variation differences in the two HSOSs are mainly due to the photogenerated carriers that affect the bulk-barrier and potential-spike heights.

Original languageEnglish
Pages (from-to)139-144
Number of pages6
JournalSurface Review and Letters
Issue number1-2
Publication statusPublished - 2008 Feb 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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