Investigation on resonant tunneling in GaAs/AlxGa1-xAs DBD using tunneling spectroscopy

Chen Hongyi; K. L. Wang

doi:10.1007/BF02778724

Investigation on resonant tunneling in GaAs/Al_xGa_1-xAs DBD using tunneling spectroscopy

Chen Hongyi, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

Abstract

Experimental investigation on resonant tunneling in various GaAs/Al_xGa_1-xAs double barrier single well structures has, been performed by using tunneling spectroscopy at different temperatures. The results show that in addition to resonant tunneling via GaAs well state confined by Al_xGa_1-xAs Γ-point barrier there exists resonant tunneling via GaAs well state confined by Al_xGa_1-xAs X-point barrier forboth indirect (x>0.4) and direct (x<0.4) cases.

Original language	English
Pages (from-to)	70-76
Number of pages	7
Journal	Journal of Electronics
Volume	7
Issue number	1
DOIs	https://doi.org/10.1007/BF02778724
Publication status	Published - 1990 Jan

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1007/BF02778724

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title = "Investigation on resonant tunneling in GaAs/AlxGa1-xAs DBD using tunneling spectroscopy",

abstract = "Experimental investigation on resonant tunneling in various GaAs/AlxGa1-xAs double barrier single well structures has, been performed by using tunneling spectroscopy at different temperatures. The results show that in addition to resonant tunneling via GaAs well state confined by AlxGa1-xAs Γ-point barrier there exists resonant tunneling via GaAs well state confined by AlxGa1-xAs X-point barrier forboth indirect (x>0.4) and direct (x<0.4) cases.",

author = "Chen Hongyi and Wang, {K. L.}",

year = "1990",

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AU - Wang, K. L.

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N2 - Experimental investigation on resonant tunneling in various GaAs/AlxGa1-xAs double barrier single well structures has, been performed by using tunneling spectroscopy at different temperatures. The results show that in addition to resonant tunneling via GaAs well state confined by AlxGa1-xAs Γ-point barrier there exists resonant tunneling via GaAs well state confined by AlxGa1-xAs X-point barrier forboth indirect (x>0.4) and direct (x<0.4) cases.

AB - Experimental investigation on resonant tunneling in various GaAs/AlxGa1-xAs double barrier single well structures has, been performed by using tunneling spectroscopy at different temperatures. The results show that in addition to resonant tunneling via GaAs well state confined by AlxGa1-xAs Γ-point barrier there exists resonant tunneling via GaAs well state confined by AlxGa1-xAs X-point barrier forboth indirect (x>0.4) and direct (x<0.4) cases.

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Investigation on resonant tunneling in GaAs/Al_xGa_1-xAs DBD using tunneling spectroscopy

Abstract

All Science Journal Classification (ASJC) codes

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