Investigations of δ-doped inxAl1-xAs/In yGa1-yAs MHEMTs characteristics with different channel compositions

Chia Jeng Chian; Ciou Sheng He; Ke Hua Su; Su Jen Yu; Bo I. Chou; An Yung Kao; Wei Chou Hsu; Ching Sung Lee

doi:10.1109/EDSSC.2007.4450233

Investigations of δ-doped in_xAl_1-xAs/In _yGa_1-yAs MHEMTs characteristics with different channel compositions

Chia Jeng Chian, Ciou Sheng He, Ke Hua Su, Su Jen Yu, Bo I. Chou, An Yung Kao, Wei Chou Hsu, Ching Sung Lee

Institute of Microelectronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This work provides comprehensive comparisons of the device characteristics, including the voltage gain, power performance, linearity, and noise characteristics, for the InAlAs/InGaAs/GaAs metamorphic high electron mobility transistors with respect to different indium contents in the InGaAs channel. The kink effects in high In-ratio InGaAs channel were found to seriously degrade the device performance. On the other hand, low In-ratio channel device is beneficial to high gain and high linearity applications, while compromised design is needed for achieving high power performance in MHEMTs.

Original language	English
Title of host publication	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages	745-748
Number of pages	4
DOIs	https://doi.org/10.1109/EDSSC.2007.4450233
Publication status	Published - 2007
Event	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan Duration: 2007 Dec 20 → 2007 Dec 22

Publication series

Name	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Other

Other	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Country/Territory	Taiwan
City	Tainan
Period	07-12-20 → 07-12-22

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/EDSSC.2007.4450233

Cite this

Chian, C. J., He, C. S., Su, K. H., Yu, S. J., Chou, B. I., Kao, A. Y., Hsu, W. C., & Lee, C. S. (2007). Investigations of δ-doped in_xAl_1-xAs/In _yGa_1-yAs MHEMTs characteristics with different channel compositions. In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 (pp. 745-748). Article 4450233 (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). https://doi.org/10.1109/EDSSC.2007.4450233

@inproceedings{fdb332f6d14a4d85bdc16152795aefc0,

title = "Investigations of δ-doped inxAl1-xAs/In yGa1-yAs MHEMTs characteristics with different channel compositions",

abstract = "This work provides comprehensive comparisons of the device characteristics, including the voltage gain, power performance, linearity, and noise characteristics, for the InAlAs/InGaAs/GaAs metamorphic high electron mobility transistors with respect to different indium contents in the InGaAs channel. The kink effects in high In-ratio InGaAs channel were found to seriously degrade the device performance. On the other hand, low In-ratio channel device is beneficial to high gain and high linearity applications, while compromised design is needed for achieving high power performance in MHEMTs.",

author = "Chian, {Chia Jeng} and He, {Ciou Sheng} and Su, {Ke Hua} and Yu, {Su Jen} and Chou, {Bo I.} and Kao, {An Yung} and Hsu, {Wei Chou} and Lee, {Ching Sung}",

year = "2007",

doi = "10.1109/EDSSC.2007.4450233",

language = "English",

isbn = "1424406374",

series = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

pages = "745--748",

booktitle = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

note = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 ; Conference date: 20-12-2007 Through 22-12-2007",

}

Chian, CJ, He, CS, Su, KH, Yu, SJ, Chou, BI, Kao, AY, Hsu, WC & Lee, CS 2007, Investigations of δ-doped in_xAl_1-xAs/In _yGa_1-yAs MHEMTs characteristics with different channel compositions. in IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007., 4450233, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, pp. 745-748, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, Tainan, Taiwan, 07-12-20. https://doi.org/10.1109/EDSSC.2007.4450233

Investigations of δ-doped in_xAl_1-xAs/In _yGa_1-yAs MHEMTs characteristics with different channel compositions. / Chian, Chia Jeng; He, Ciou Sheng; Su, Ke Hua et al.
IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. p. 745-748 4450233 (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - This work provides comprehensive comparisons of the device characteristics, including the voltage gain, power performance, linearity, and noise characteristics, for the InAlAs/InGaAs/GaAs metamorphic high electron mobility transistors with respect to different indium contents in the InGaAs channel. The kink effects in high In-ratio InGaAs channel were found to seriously degrade the device performance. On the other hand, low In-ratio channel device is beneficial to high gain and high linearity applications, while compromised design is needed for achieving high power performance in MHEMTs.

AB - This work provides comprehensive comparisons of the device characteristics, including the voltage gain, power performance, linearity, and noise characteristics, for the InAlAs/InGaAs/GaAs metamorphic high electron mobility transistors with respect to different indium contents in the InGaAs channel. The kink effects in high In-ratio InGaAs channel were found to seriously degrade the device performance. On the other hand, low In-ratio channel device is beneficial to high gain and high linearity applications, while compromised design is needed for achieving high power performance in MHEMTs.

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Chian CJ, He CS, Su KH, Yu SJ, Chou BI, Kao AY et al. Investigations of δ-doped in_xAl_1-xAs/In _yGa_1-yAs MHEMTs characteristics with different channel compositions. In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. p. 745-748. 4450233. (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). doi: 10.1109/EDSSC.2007.4450233