Investigations of δ-doped in x Al 1-x As/In y Ga 1-y As MHEMTs characteristics with different channel compositions

Chia Jeng Chian, Ciou Sheng He, Ke Hua Su, Su Jen Yu, Bo I. Chou, An Yung Kao, Wei-Chou Hsu, Ching Sung Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work provides comprehensive comparisons of the device characteristics, including the voltage gain, power performance, linearity, and noise characteristics, for the InAlAs/InGaAs/GaAs metamorphic high electron mobility transistors with respect to different indium contents in the InGaAs channel. The kink effects in high In-ratio InGaAs channel were found to seriously degrade the device performance. On the other hand, low In-ratio channel device is beneficial to high gain and high linearity applications, while compromised design is needed for achieving high power performance in MHEMTs.

Original languageEnglish
Title of host publicationIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages745-748
Number of pages4
DOIs
Publication statusPublished - 2007 Dec 1
EventIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan
Duration: 2007 Dec 202007 Dec 22

Publication series

NameIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Other

OtherIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
CountryTaiwan
CityTainan
Period07-12-2007-12-22

Fingerprint

Indium
High electron mobility transistors
Electric potential
Chemical analysis
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Chian, C. J., He, C. S., Su, K. H., Yu, S. J., Chou, B. I., Kao, A. Y., ... Lee, C. S. (2007). Investigations of δ-doped in x Al 1-x As/In y Ga 1-y As MHEMTs characteristics with different channel compositions In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 (pp. 745-748). [4450233] (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). https://doi.org/10.1109/EDSSC.2007.4450233
Chian, Chia Jeng ; He, Ciou Sheng ; Su, Ke Hua ; Yu, Su Jen ; Chou, Bo I. ; Kao, An Yung ; Hsu, Wei-Chou ; Lee, Ching Sung. / Investigations of δ-doped in x Al 1-x As/In y Ga 1-y As MHEMTs characteristics with different channel compositions IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. pp. 745-748 (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007).
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abstract = "This work provides comprehensive comparisons of the device characteristics, including the voltage gain, power performance, linearity, and noise characteristics, for the InAlAs/InGaAs/GaAs metamorphic high electron mobility transistors with respect to different indium contents in the InGaAs channel. The kink effects in high In-ratio InGaAs channel were found to seriously degrade the device performance. On the other hand, low In-ratio channel device is beneficial to high gain and high linearity applications, while compromised design is needed for achieving high power performance in MHEMTs.",
author = "Chian, {Chia Jeng} and He, {Ciou Sheng} and Su, {Ke Hua} and Yu, {Su Jen} and Chou, {Bo I.} and Kao, {An Yung} and Wei-Chou Hsu and Lee, {Ching Sung}",
year = "2007",
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isbn = "1424406374",
series = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",
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Chian, CJ, He, CS, Su, KH, Yu, SJ, Chou, BI, Kao, AY, Hsu, W-C & Lee, CS 2007, Investigations of δ-doped in x Al 1-x As/In y Ga 1-y As MHEMTs characteristics with different channel compositions in IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007., 4450233, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, pp. 745-748, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, Tainan, Taiwan, 07-12-20. https://doi.org/10.1109/EDSSC.2007.4450233

Investigations of δ-doped in x Al 1-x As/In y Ga 1-y As MHEMTs characteristics with different channel compositions . / Chian, Chia Jeng; He, Ciou Sheng; Su, Ke Hua; Yu, Su Jen; Chou, Bo I.; Kao, An Yung; Hsu, Wei-Chou; Lee, Ching Sung.

IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. p. 745-748 4450233 (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - This work provides comprehensive comparisons of the device characteristics, including the voltage gain, power performance, linearity, and noise characteristics, for the InAlAs/InGaAs/GaAs metamorphic high electron mobility transistors with respect to different indium contents in the InGaAs channel. The kink effects in high In-ratio InGaAs channel were found to seriously degrade the device performance. On the other hand, low In-ratio channel device is beneficial to high gain and high linearity applications, while compromised design is needed for achieving high power performance in MHEMTs.

AB - This work provides comprehensive comparisons of the device characteristics, including the voltage gain, power performance, linearity, and noise characteristics, for the InAlAs/InGaAs/GaAs metamorphic high electron mobility transistors with respect to different indium contents in the InGaAs channel. The kink effects in high In-ratio InGaAs channel were found to seriously degrade the device performance. On the other hand, low In-ratio channel device is beneficial to high gain and high linearity applications, while compromised design is needed for achieving high power performance in MHEMTs.

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Chian CJ, He CS, Su KH, Yu SJ, Chou BI, Kao AY et al. Investigations of δ-doped in x Al 1-x As/In y Ga 1-y As MHEMTs characteristics with different channel compositions In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. p. 745-748. 4450233. (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). https://doi.org/10.1109/EDSSC.2007.4450233