Investigations of δ-doped in0.52Al0.48As/ InxGai1-xAs/InP HEMTs with different channel structures

Ching Sung Lee, Hsin Hung Chen, Jun Chin Huang, Wei-Chou Hsu, Yeong Jia Chen

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


The device characteristics of δ-doped In0.52Al 0.48As/InGaAs/InP high-electron-mobility transistors (HEMTs) with different channel designs, grown by using the low-pressure metal-organic chemical-vapor deposition (LP-MOCVD) technique, have been studied. The In xGa1_xAs channel structures include a step-graded channel (SGC) with x = 0.56/0.53/0.5, a lattice-matched channel (LMC) with x = 0.53, and an inverse linearly-graded channel (ILGC) with x = 0.5 → 0.56. Improvements in the device's threshold, extrinsic conductance, saturation current density, gate-voltage swing (GVS), output conductance, voltage gain, and high-frequency and high-temperature performances have been comprehensively investigated and compared with respect to the specific channel design.

Original languageEnglish
Pages (from-to)1046-1052
Number of pages7
JournalJournal of the Korean Physical Society
Issue number6
Publication statusPublished - 2005 Dec

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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