The device characteristics of δ-doped In0.52Al 0.48As/InGaAs/InP high-electron-mobility transistors (HEMTs) with different channel designs, grown by using the low-pressure metal-organic chemical-vapor deposition (LP-MOCVD) technique, have been studied. The In xGa1_xAs channel structures include a step-graded channel (SGC) with x = 0.56/0.53/0.5, a lattice-matched channel (LMC) with x = 0.53, and an inverse linearly-graded channel (ILGC) with x = 0.5 → 0.56. Improvements in the device's threshold, extrinsic conductance, saturation current density, gate-voltage swing (GVS), output conductance, voltage gain, and high-frequency and high-temperature performances have been comprehensively investigated and compared with respect to the specific channel design.
|Number of pages||7|
|Journal||Journal of the Korean Physical Society|
|Publication status||Published - 2005 Dec|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)