TY - JOUR
T1 - Investigations of δ-doped InAlAs/InGaAs/InP high-electron-mobility transistors with linearly graded inxGa1-x as channel
AU - Huang, Jun Chin
AU - Hsu, Wei Chou
AU - Lee, Ching Sung
AU - Chen, Yeong Jia
AU - Huang, Dong Hai
AU - Chen, Hsin Hung
PY - 2005/12/8
Y1 - 2005/12/8
N2 - Comprehensive investigations of the various static and microwave performances of InAlAs/InGaAs/InP high-electronmobility transistor (HEMT) with a linearly graded InxGa1-xAs channel (LGC-HEMT) have been conducted. LGC-HEEMT was compared with the same HEMT having a conventional lattice-matched In0.53Ga0.47As channel (LM-HEMT). Improved carrier transport characteristics and confinement capability achieved by employing a linearly graded channel have contributed to a high extrinsic transconductance (gm) of 319 mS/mm, a high unity-gain cutoff frequency (ft) of 37 GHz, and a maximum oscillation frequency (f max) of 51 GHz at 300 K for a gate length of 0.65 μm. The improved gate-voltage swing, turn-on and output power characteristics of LGC-HEMT have also been discussed.
AB - Comprehensive investigations of the various static and microwave performances of InAlAs/InGaAs/InP high-electronmobility transistor (HEMT) with a linearly graded InxGa1-xAs channel (LGC-HEMT) have been conducted. LGC-HEEMT was compared with the same HEMT having a conventional lattice-matched In0.53Ga0.47As channel (LM-HEMT). Improved carrier transport characteristics and confinement capability achieved by employing a linearly graded channel have contributed to a high extrinsic transconductance (gm) of 319 mS/mm, a high unity-gain cutoff frequency (ft) of 37 GHz, and a maximum oscillation frequency (f max) of 51 GHz at 300 K for a gate length of 0.65 μm. The improved gate-voltage swing, turn-on and output power characteristics of LGC-HEMT have also been discussed.
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U2 - 10.1143/JJAP.44.8305
DO - 10.1143/JJAP.44.8305
M3 - Article
AN - SCOPUS:31544440992
SN - 0021-4922
VL - 44
SP - 8305
EP - 8308
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 12
ER -