Investigations of AlGaN/AlN/GaN MOS-HEMTs on si substrate by ozone water oxidation method

Han Yin Liu, Ching Sung Lee, Wei Chou Hsu, Lung Yi Tseng, Bo Yi Chou, Chiu Sheng Ho, Chang Luen Wu

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)


Al0.3Ga0.7N AlN}/GaN metal-oxide-semiconductor high electron mobility transistors (HEMTs) grown on Si substrates by using ozone water oxidation method are investigated. Superior improvements of 52.2% in two-terminal gate-drain breakdown voltage (BVGD), 30.3% in drain-source current density (IDS) at VGS=0VIDSS0), 43.6% in maximum IDS(IDS,\max), 34.7% in maximum extrinsic transconductance (gm,\max), and 52.7%/34.3% in unity-gain cutoff/maximum oscillation frequency (fT/fmax) are achieved as compared with a reference Schottky-gated HEMT. Thermal stability is studied by conducting temperature-dependent characterizations of devices at ambient temperatures of 300-550 K. Time-dependent electrical reliability analyses for the devices stressed in off-state (VGS=-20V and VDS=0V) for 0-60 h and on-state (VGS=2 V and VDS=20V) for 0-20 h are also made to physically investigate the dominant degradation mechanisms. Excellent reliability and thermal stability at 300-550 K are achieved by the present design.

Original languageEnglish
Article number6523974
Pages (from-to)2231-2237
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number7
Publication statusPublished - 2013

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


Dive into the research topics of 'Investigations of AlGaN/AlN/GaN MOS-HEMTs on si substrate by ozone water oxidation method'. Together they form a unique fingerprint.

Cite this