Investigations of AlGaN/GaN HFETs utilizing post-metallization etching by nitric acid treatment

Bo Yi Chou, Wei-Chou Hsu, Ching Sung Lee, Han Yin Liu, Chih-Ming Tsai, Chiu Sheng Ho

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

This work investigates AlGaN/GaN heterostructure field-effect transistors (HFETs) processed by using a simple post-metallization etching (PME) treatment. Decreased gate length (LG) can be achieved by using nitric acid (HNO3) PME treatment owing to the high etching selectivity of HNO3 of Ni against the Au and GaN layer. Influences on LG, etched gate profiles and device characteristics with respect to different PME processing parameters by HNO3 treatment are systematically investigated. Optimum device performance is obtained as LG was reduced to 0.5 μm by using a 1 μm long gate mask by immersing the device into a 45% diluted HNO3 solution for 35 s. Improved device performances, including maximum drain-source current density (IDS, max: 657.6 mA mm-1 → 898.5 mA mm-1), drain-source saturation current density at zero gate bias (IDSS0: 448.3 mA mm -1 → 653.4 mA mm-1), maximum extrinsic transconductance (gm,max: 158.3 mS mm-1 → 219.2 mS mm-1), unity-gain cut-off frequency (fT: 12.35 GHz → 22.05 GHz), maximum oscillation frequency (fmax: 17.55 GHz → 29.4 GHz) and power-added efficiency (P.A.E.: 26.3% → 34.5%) compared to the untreated reference device, have been successfully achieved.

Original languageEnglish
Article number074003
JournalSemiconductor Science and Technology
Volume28
Issue number7
DOIs
Publication statusPublished - 2013 Jul 1

Fingerprint

Nitric Acid
nitric acid
High electron mobility transistors
Nitric acid
Metallizing
Etching
field effect transistors
etching
Current density
current density
Cutoff frequency
Transconductance
Masks
power efficiency
transconductance
unity
masks
cut-off
selectivity
aluminum gallium nitride

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

@article{961f269d5b974749824437f70e4588c9,
title = "Investigations of AlGaN/GaN HFETs utilizing post-metallization etching by nitric acid treatment",
abstract = "This work investigates AlGaN/GaN heterostructure field-effect transistors (HFETs) processed by using a simple post-metallization etching (PME) treatment. Decreased gate length (LG) can be achieved by using nitric acid (HNO3) PME treatment owing to the high etching selectivity of HNO3 of Ni against the Au and GaN layer. Influences on LG, etched gate profiles and device characteristics with respect to different PME processing parameters by HNO3 treatment are systematically investigated. Optimum device performance is obtained as LG was reduced to 0.5 μm by using a 1 μm long gate mask by immersing the device into a 45{\%} diluted HNO3 solution for 35 s. Improved device performances, including maximum drain-source current density (IDS, max: 657.6 mA mm-1 → 898.5 mA mm-1), drain-source saturation current density at zero gate bias (IDSS0: 448.3 mA mm -1 → 653.4 mA mm-1), maximum extrinsic transconductance (gm,max: 158.3 mS mm-1 → 219.2 mS mm-1), unity-gain cut-off frequency (fT: 12.35 GHz → 22.05 GHz), maximum oscillation frequency (fmax: 17.55 GHz → 29.4 GHz) and power-added efficiency (P.A.E.: 26.3{\%} → 34.5{\%}) compared to the untreated reference device, have been successfully achieved.",
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language = "English",
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Investigations of AlGaN/GaN HFETs utilizing post-metallization etching by nitric acid treatment. / Chou, Bo Yi; Hsu, Wei-Chou; Lee, Ching Sung; Liu, Han Yin; Tsai, Chih-Ming; Ho, Chiu Sheng.

In: Semiconductor Science and Technology, Vol. 28, No. 7, 074003, 01.07.2013.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Investigations of AlGaN/GaN HFETs utilizing post-metallization etching by nitric acid treatment

AU - Chou, Bo Yi

AU - Hsu, Wei-Chou

AU - Lee, Ching Sung

AU - Liu, Han Yin

AU - Tsai, Chih-Ming

AU - Ho, Chiu Sheng

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Y1 - 2013/7/1

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AB - This work investigates AlGaN/GaN heterostructure field-effect transistors (HFETs) processed by using a simple post-metallization etching (PME) treatment. Decreased gate length (LG) can be achieved by using nitric acid (HNO3) PME treatment owing to the high etching selectivity of HNO3 of Ni against the Au and GaN layer. Influences on LG, etched gate profiles and device characteristics with respect to different PME processing parameters by HNO3 treatment are systematically investigated. Optimum device performance is obtained as LG was reduced to 0.5 μm by using a 1 μm long gate mask by immersing the device into a 45% diluted HNO3 solution for 35 s. Improved device performances, including maximum drain-source current density (IDS, max: 657.6 mA mm-1 → 898.5 mA mm-1), drain-source saturation current density at zero gate bias (IDSS0: 448.3 mA mm -1 → 653.4 mA mm-1), maximum extrinsic transconductance (gm,max: 158.3 mS mm-1 → 219.2 mS mm-1), unity-gain cut-off frequency (fT: 12.35 GHz → 22.05 GHz), maximum oscillation frequency (fmax: 17.55 GHz → 29.4 GHz) and power-added efficiency (P.A.E.: 26.3% → 34.5%) compared to the untreated reference device, have been successfully achieved.

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