Abstract
This work investigates AlGaN/GaN heterostructure field-effect transistors (HFETs) processed by using a simple post-metallization etching (PME) treatment. Decreased gate length (LG) can be achieved by using nitric acid (HNO3) PME treatment owing to the high etching selectivity of HNO3 of Ni against the Au and GaN layer. Influences on LG, etched gate profiles and device characteristics with respect to different PME processing parameters by HNO3 treatment are systematically investigated. Optimum device performance is obtained as LG was reduced to 0.5 μm by using a 1 μm long gate mask by immersing the device into a 45% diluted HNO3 solution for 35 s. Improved device performances, including maximum drain-source current density (IDS, max: 657.6 mA mm-1 → 898.5 mA mm-1), drain-source saturation current density at zero gate bias (IDSS0: 448.3 mA mm -1 → 653.4 mA mm-1), maximum extrinsic transconductance (gm,max: 158.3 mS mm-1 → 219.2 mS mm-1), unity-gain cut-off frequency (fT: 12.35 GHz → 22.05 GHz), maximum oscillation frequency (fmax: 17.55 GHz → 29.4 GHz) and power-added efficiency (P.A.E.: 26.3% → 34.5%) compared to the untreated reference device, have been successfully achieved.
| Original language | English |
|---|---|
| Article number | 074003 |
| Journal | Semiconductor Science and Technology |
| Volume | 28 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2013 Jul 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
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Investigations of AlGaN/GaN HFETs utilizing post-metallization etching by nitric acid treatment. / Chou, Bo Yi; Hsu, Wei-Chou; Lee, Ching Sung; Liu, Han Yin; Tsai, Chih-Ming; Ho, Chiu Sheng.
In: Semiconductor Science and Technology, Vol. 28, No. 7, 074003, 01.07.2013.Research output: Contribution to journal › Article
TY - JOUR
T1 - Investigations of AlGaN/GaN HFETs utilizing post-metallization etching by nitric acid treatment
AU - Chou, Bo Yi
AU - Hsu, Wei-Chou
AU - Lee, Ching Sung
AU - Liu, Han Yin
AU - Tsai, Chih-Ming
AU - Ho, Chiu Sheng
PY - 2013/7/1
Y1 - 2013/7/1
N2 - This work investigates AlGaN/GaN heterostructure field-effect transistors (HFETs) processed by using a simple post-metallization etching (PME) treatment. Decreased gate length (LG) can be achieved by using nitric acid (HNO3) PME treatment owing to the high etching selectivity of HNO3 of Ni against the Au and GaN layer. Influences on LG, etched gate profiles and device characteristics with respect to different PME processing parameters by HNO3 treatment are systematically investigated. Optimum device performance is obtained as LG was reduced to 0.5 μm by using a 1 μm long gate mask by immersing the device into a 45% diluted HNO3 solution for 35 s. Improved device performances, including maximum drain-source current density (IDS, max: 657.6 mA mm-1 → 898.5 mA mm-1), drain-source saturation current density at zero gate bias (IDSS0: 448.3 mA mm -1 → 653.4 mA mm-1), maximum extrinsic transconductance (gm,max: 158.3 mS mm-1 → 219.2 mS mm-1), unity-gain cut-off frequency (fT: 12.35 GHz → 22.05 GHz), maximum oscillation frequency (fmax: 17.55 GHz → 29.4 GHz) and power-added efficiency (P.A.E.: 26.3% → 34.5%) compared to the untreated reference device, have been successfully achieved.
AB - This work investigates AlGaN/GaN heterostructure field-effect transistors (HFETs) processed by using a simple post-metallization etching (PME) treatment. Decreased gate length (LG) can be achieved by using nitric acid (HNO3) PME treatment owing to the high etching selectivity of HNO3 of Ni against the Au and GaN layer. Influences on LG, etched gate profiles and device characteristics with respect to different PME processing parameters by HNO3 treatment are systematically investigated. Optimum device performance is obtained as LG was reduced to 0.5 μm by using a 1 μm long gate mask by immersing the device into a 45% diluted HNO3 solution for 35 s. Improved device performances, including maximum drain-source current density (IDS, max: 657.6 mA mm-1 → 898.5 mA mm-1), drain-source saturation current density at zero gate bias (IDSS0: 448.3 mA mm -1 → 653.4 mA mm-1), maximum extrinsic transconductance (gm,max: 158.3 mS mm-1 → 219.2 mS mm-1), unity-gain cut-off frequency (fT: 12.35 GHz → 22.05 GHz), maximum oscillation frequency (fmax: 17.55 GHz → 29.4 GHz) and power-added efficiency (P.A.E.: 26.3% → 34.5%) compared to the untreated reference device, have been successfully achieved.
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U2 - 10.1088/0268-1242/28/7/074003
DO - 10.1088/0268-1242/28/7/074003
M3 - Article
VL - 28
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 7
M1 - 074003
ER -