Investigations of AlGaN/GaN MOS-HEMT with Al₂O₃ deposition by ultrasonic spray pyrolysis method

Engineering & Materials Science

• Spray pyrolysis 100%
• Oxide semiconductors 76%
• High electron mobility transistors 74%
• Aluminum oxide 61%
• Ultrasonics 54%
• Metals 41%
• Current density 24%
• Gate dielectrics 18%
• Gates (transistor) 18%
• Passivation 15%
• Cutoff frequency 14%
• Electric breakdown 14%
• Leakage currents 13%
• Electric potential 13%
• Hysteresis 12%
• Capacitance 11%
• Temperature 10%
• Substrates 9%

Physics & Astronomy

• high electron mobility transistors 66%
• metal oxide semiconductors 65%
• pyrolysis 64%
• sprayers 60%
• ultrasonics 48%
• current density 13%
• electric potential 9%
• electrical faults 9%
• passivity 8%
• unity 8%
• performance 8%
• cut-off 7%
• leakage 7%
• capacitance 7%
• hysteresis 7%
• saturation 6%
• oscillations 5%
• temperature 5%
• output 5%

Chemical Compounds

• Electron Mobility 76%
• Spray Pyrolysis 74%
• Fluorescence Maxima 56%
• Drain Current 33%
• Breakdown Voltage 31%
• Current Density 31%
• Leakage Current 28%
• Hysteresis 21%
• Dielectric Material 18%