Investigations of low-frequency noise of GaN-based heterostructure field-effect transistors

S. C. Wei, Y. K. Su, T. M. Kuan, R. L. Wang, S. J. Chang, C. H. Ko, J. B. Webb, J. A. Bardwell

Research output: Contribution to journalArticle

Abstract

The low-frequency noise of AlGaN/GaN heterojunction field-effect transistors (HFETs) with different Al fraction of the AlGaN layer was measured and characterised. The DC characteristics of AlGaN/GaN HFETs with higher Al fraction is better. However, the noise performance is poorer owing to the large lattice mismatch with higher Al fraction in the AlGaN layer. The pure flicker noise and lower noise power density can be obtained by the smaller Al fraction in the AlGaN layer of AlGaN/GaN HFETs.

Original languageEnglish
Pages (from-to)877-878
Number of pages2
JournalElectronics Letters
Volume39
Issue number11
DOIs
Publication statusPublished - 2003 May 29

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Wei, S. C., Su, Y. K., Kuan, T. M., Wang, R. L., Chang, S. J., Ko, C. H., Webb, J. B., & Bardwell, J. A. (2003). Investigations of low-frequency noise of GaN-based heterostructure field-effect transistors. Electronics Letters, 39(11), 877-878. https://doi.org/10.1049/el:20030548