Investigations of varactor depletion capacitance effects of fin field-Effect transistor devices

Chien Hung Chen; Ying Chien Fang; Chung Hao Chiang; Sheng-Yuan Chu

doi:10.7567/JJAP.53.088003

Investigations of varactor depletion capacitance effects of fin field-Effect transistor devices

Chien Hung Chen, Ying Chien Fang, Chung Hao Chiang, Sheng-Yuan Chu

Research output: Contribution to journal › Article › peer-review

Abstract

The effects of the depletion capacitance of a varactor between fin field-effect transistor (FinFET) and bulk planar devices are investigated. Fabricated NMOS varactors are characterized and studied. The depletion capacitance of an NMOS varactor in FinFETs is lower than that of the conventional bulk planar one. Thus, the NMOS FinFET varactor provides a larger tuning range (about 10.4 times with respect to minimal capacitance) than the bulk planar one (approximately 3.7 times). The simulation results of the proposed three-dimensional (3D) devices with FinFET and bulk planar varactors show that the depletion layer width of the NMOS varactors in FinFETs is more sensitive to the applied gate voltage than the bulk planar one.

Original language	English
Article number	088003
Journal	Japanese Journal of Applied Physics
Volume	53
Issue number	8
DOIs	https://doi.org/10.7567/JJAP.53.088003
Publication status	Published - 2014 Jan 1

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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abstract = "The effects of the depletion capacitance of a varactor between fin field-effect transistor (FinFET) and bulk planar devices are investigated. Fabricated NMOS varactors are characterized and studied. The depletion capacitance of an NMOS varactor in FinFETs is lower than that of the conventional bulk planar one. Thus, the NMOS FinFET varactor provides a larger tuning range (about 10.4 times with respect to minimal capacitance) than the bulk planar one (approximately 3.7 times). The simulation results of the proposed three-dimensional (3D) devices with FinFET and bulk planar varactors show that the depletion layer width of the NMOS varactors in FinFETs is more sensitive to the applied gate voltage than the bulk planar one.",

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AU - Chen, Chien Hung

AU - Fang, Ying Chien

AU - Chiang, Chung Hao

AU - Chu, Sheng-Yuan

PY - 2014/1/1

Y1 - 2014/1/1

N2 - The effects of the depletion capacitance of a varactor between fin field-effect transistor (FinFET) and bulk planar devices are investigated. Fabricated NMOS varactors are characterized and studied. The depletion capacitance of an NMOS varactor in FinFETs is lower than that of the conventional bulk planar one. Thus, the NMOS FinFET varactor provides a larger tuning range (about 10.4 times with respect to minimal capacitance) than the bulk planar one (approximately 3.7 times). The simulation results of the proposed three-dimensional (3D) devices with FinFET and bulk planar varactors show that the depletion layer width of the NMOS varactors in FinFETs is more sensitive to the applied gate voltage than the bulk planar one.

AB - The effects of the depletion capacitance of a varactor between fin field-effect transistor (FinFET) and bulk planar devices are investigated. Fabricated NMOS varactors are characterized and studied. The depletion capacitance of an NMOS varactor in FinFETs is lower than that of the conventional bulk planar one. Thus, the NMOS FinFET varactor provides a larger tuning range (about 10.4 times with respect to minimal capacitance) than the bulk planar one (approximately 3.7 times). The simulation results of the proposed three-dimensional (3D) devices with FinFET and bulk planar varactors show that the depletion layer width of the NMOS varactors in FinFETs is more sensitive to the applied gate voltage than the bulk planar one.

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Investigations of varactor depletion capacitance effects of fin field-Effect transistor devices

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