Investigations of ZnO Nanowires and ZnO/p-GaN heterojunction diodes grown by different aqueous solutions zinc nitrate and zinc acetate

C. H. Lan, J. D. Hwang, S. J. Chang, J. S. Liao, Y. C. Cheng, W. J. Lin, J. C. Lin

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8 Citations (Scopus)

Abstract

This study investigated ZnO nanowires, grown by different solutions of zinc nitrate and zinc acetate, using scanning electron microscopy, room-temperature photoluminescence, and X-ray photoelectron spectroscopy. ZnO grown by zinc nitrate had thinner nanowires, with the average diameter being reduced by about five times, than that grown by zinc acetate. Fewer surface defects and better electrical performance were obtained in zinc acetate-ZnO. The turn-on voltage and ideality factor were reduced from 2.2 to 2.0 V and 3.7 to 2.14, respectively, for the diodes grown by zinc nitrate and zinc acetate. Leakage current density was also decreased by about 1 order under 4 V reverse-bias voltage.

Original languageEnglish
Pages (from-to)H363-H365
JournalElectrochemical and Solid-State Letters
Volume13
Issue number11
DOIs
Publication statusPublished - 2010 Sep 20

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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