Investigations on Al0.2Ga0.8As/In 0.2Ga0.8As MOS-pHEMTs with different shifted λ-gate structures

Ching Sung Lee, Ming Yuan Lin, Bo Yi Chou, Wei Chou Hsu, Han Yin Liu, Chiu Sheng Ho, Ying Nan Lai

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Abstract

Al0.2Ga0.8As/In0.2Ga0.8As metal-oxide-semiconductor pseudomorphic high electron mobility transistors (MOS-pHEMTs) with different shifted λ-gate structures have been comprehensively investigated in this work. The present λ-gate MOS-pHEMTs were fabricated by using techniques of ozone water oxidation and shift exposure. Gate length (LG) reduction, surface oxide passivation, and field-plate structure are achieved at the same time by the devised λ-gate processing. By using the same optical mask set, devices with different LG/field-plate lengths (LFP) of 1.2/0 μm, 0.8/0.4 μm, and 0.6/0.6 μm were fabricated upon the identical epitaxial layer structure. Device performances including device gain, current drive, off/on-state breakdown, high-frequency characteristics, power characteristics, and high-temperature stability up to 450 K, are investigated with respect to different LG/LFP lengths in this work.

Original languageEnglish
JournalECS Journal of Solid State Science and Technology
Volume1
Issue number1
DOIs
Publication statusPublished - 2012 Dec 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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