Investigations on in0.2Ga0.8AsSb/GaAs high electron mobility transistors with gate passivations

Ching Sung Lee; Ciou Sheng He; Wei Chou Hsu; Ke Hua Su; Ping Chang Yang; Bo I. Chou; An Yung Kao

doi:10.1109/ICSICT.2008.4734730

Investigations on in_0.2Ga_0.8AsSb/GaAs high electron mobility transistors with gate passivations

Ching Sung Lee, Ciou Sheng He, Wei Chou Hsu, Ke Hua Su, Ping Chang Yang, Bo I. Chou, An Yung Kao

Institute of Microelectronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This work reports, high electron mobility transistors (HEMTs) using a dilute antimony In_0.2Gao_0.8AsSb channel, grown by molecular beam epitaxy (MBE) system. Introducing the surfactant-like Sb atoms during growth of the InGaAs/GaAs quantum well (QW) was devised to effectively improve the channel confinement capability and the interfacial quality within the InGaAsSb/GaAs QW heterostructure, resulting in enhanced carrier transport property and superior device performances. In comparison, the proposed devices with employing sulfur (NH₄)₂S_x passivation (sample A), silicon nitride (SiN_x) surface passivation (sample B), or without passivation (sample C) have been investigated. Sample A (B/C) has demonstrated superiorly the maximum extrinsic trans-conductance (g _m,max) of 221 (205/183) mS/mm, the drain saturation current density (I_dss) of 205 (190/174) mA/mm, the gate-voltage swing (GVS) of 1.105 (1.28/1.482) V, and the P.A.E. characteristic 30.4 (21.4/13) % at 300 K, with the gate dimensions of 1 × 200 μm².

Original language	English
Title of host publication	ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
Pages	1106-1109
Number of pages	4
DOIs	https://doi.org/10.1109/ICSICT.2008.4734730
Publication status	Published - 2008
Event	2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China Duration: 2008 Oct 20 → 2008 Oct 23

Publication series

Name	International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Other

Other	2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
Country/Territory	China
City	Beijing
Period	08-10-20 → 08-10-23

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Condensed Matter Physics
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ICSICT.2008.4734730

Cite this

Lee, C. S., He, C. S., Hsu, W. C., Su, K. H., Yang, P. C., Chou, B. I., & Kao, A. Y. (2008). Investigations on in_0.2Ga_0.8AsSb/GaAs high electron mobility transistors with gate passivations. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings (pp. 1106-1109). Article 4734730 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). https://doi.org/10.1109/ICSICT.2008.4734730

Lee, Ching Sung ; He, Ciou Sheng ; Hsu, Wei Chou et al. / Investigations on in_0.2Ga_0.8AsSb/GaAs high electron mobility transistors with gate passivations. ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. pp. 1106-1109 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

@inproceedings{121a93b072c74a468351bd0dd9ac86f0,

title = "Investigations on in0.2Ga0.8AsSb/GaAs high electron mobility transistors with gate passivations",

abstract = "This work reports, high electron mobility transistors (HEMTs) using a dilute antimony In0.2Gao0.8AsSb channel, grown by molecular beam epitaxy (MBE) system. Introducing the surfactant-like Sb atoms during growth of the InGaAs/GaAs quantum well (QW) was devised to effectively improve the channel confinement capability and the interfacial quality within the InGaAsSb/GaAs QW heterostructure, resulting in enhanced carrier transport property and superior device performances. In comparison, the proposed devices with employing sulfur (NH4)2Sx passivation (sample A), silicon nitride (SiNx) surface passivation (sample B), or without passivation (sample C) have been investigated. Sample A (B/C) has demonstrated superiorly the maximum extrinsic trans-conductance (g m,max) of 221 (205/183) mS/mm, the drain saturation current density (Idss) of 205 (190/174) mA/mm, the gate-voltage swing (GVS) of 1.105 (1.28/1.482) V, and the P.A.E. characteristic 30.4 (21.4/13) % at 300 K, with the gate dimensions of 1 × 200 μm2.",

author = "Lee, {Ching Sung} and He, {Ciou Sheng} and Hsu, {Wei Chou} and Su, {Ke Hua} and Yang, {Ping Chang} and Chou, {Bo I.} and Kao, {An Yung}",

year = "2008",

doi = "10.1109/ICSICT.2008.4734730",

language = "English",

isbn = "9781424421855",

series = "International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT",

pages = "1106--1109",

booktitle = "ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings",

note = "2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 ; Conference date: 20-10-2008 Through 23-10-2008",

}

Lee, CS, He, CS, Hsu, WC, Su, KH, Yang, PC, Chou, BI & Kao, AY 2008, Investigations on in_0.2Ga_0.8AsSb/GaAs high electron mobility transistors with gate passivations. in ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings., 4734730, International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, pp. 1106-1109, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008, Beijing, China, 08-10-20. https://doi.org/10.1109/ICSICT.2008.4734730

Investigations on in_0.2Ga_0.8AsSb/GaAs high electron mobility transistors with gate passivations. / Lee, Ching Sung; He, Ciou Sheng; Hsu, Wei Chou et al.
ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. p. 1106-1109 4734730 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Investigations on in0.2Ga0.8AsSb/GaAs high electron mobility transistors with gate passivations

AU - Lee, Ching Sung

AU - He, Ciou Sheng

AU - Hsu, Wei Chou

AU - Su, Ke Hua

AU - Yang, Ping Chang

AU - Chou, Bo I.

AU - Kao, An Yung

PY - 2008

Y1 - 2008

N2 - This work reports, high electron mobility transistors (HEMTs) using a dilute antimony In0.2Gao0.8AsSb channel, grown by molecular beam epitaxy (MBE) system. Introducing the surfactant-like Sb atoms during growth of the InGaAs/GaAs quantum well (QW) was devised to effectively improve the channel confinement capability and the interfacial quality within the InGaAsSb/GaAs QW heterostructure, resulting in enhanced carrier transport property and superior device performances. In comparison, the proposed devices with employing sulfur (NH4)2Sx passivation (sample A), silicon nitride (SiNx) surface passivation (sample B), or without passivation (sample C) have been investigated. Sample A (B/C) has demonstrated superiorly the maximum extrinsic trans-conductance (g m,max) of 221 (205/183) mS/mm, the drain saturation current density (Idss) of 205 (190/174) mA/mm, the gate-voltage swing (GVS) of 1.105 (1.28/1.482) V, and the P.A.E. characteristic 30.4 (21.4/13) % at 300 K, with the gate dimensions of 1 × 200 μm2.

AB - This work reports, high electron mobility transistors (HEMTs) using a dilute antimony In0.2Gao0.8AsSb channel, grown by molecular beam epitaxy (MBE) system. Introducing the surfactant-like Sb atoms during growth of the InGaAs/GaAs quantum well (QW) was devised to effectively improve the channel confinement capability and the interfacial quality within the InGaAsSb/GaAs QW heterostructure, resulting in enhanced carrier transport property and superior device performances. In comparison, the proposed devices with employing sulfur (NH4)2Sx passivation (sample A), silicon nitride (SiNx) surface passivation (sample B), or without passivation (sample C) have been investigated. Sample A (B/C) has demonstrated superiorly the maximum extrinsic trans-conductance (g m,max) of 221 (205/183) mS/mm, the drain saturation current density (Idss) of 205 (190/174) mA/mm, the gate-voltage swing (GVS) of 1.105 (1.28/1.482) V, and the P.A.E. characteristic 30.4 (21.4/13) % at 300 K, with the gate dimensions of 1 × 200 μm2.

UR - http://www.scopus.com/inward/record.url?scp=60649118796&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=60649118796&partnerID=8YFLogxK

U2 - 10.1109/ICSICT.2008.4734730

DO - 10.1109/ICSICT.2008.4734730

M3 - Conference contribution

AN - SCOPUS:60649118796

SN - 9781424421855

T3 - International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

SP - 1106

EP - 1109

BT - ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings

T2 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008

Y2 - 20 October 2008 through 23 October 2008

ER -

Lee CS, He CS, Hsu WC, Su KH, Yang PC, Chou BI et al. Investigations on in_0.2Ga_0.8AsSb/GaAs high electron mobility transistors with gate passivations. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. p. 1106-1109. 4734730. (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). doi: 10.1109/ICSICT.2008.4734730