Investigations on the highly-stable thermal characteristics of a dilute Al0.3Ga0.7As/In0.3Ga0.7As 0.99N0.01/GaAs heterostructure field effect transistor (HFET)

Ching Sung Lee, Bo I. Chou, Wei Chou Hsu, Ke Hua Su

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Abstract

This work reports a novel AlGaAs/InGaAsN/GaAs heterostructure field-effect transistor (HFET) by integrating a dilute In0.3Ga 0.7AsN0.01 nitride-channel directly onto a GaAs substrate by using a molecular beam epitaxy (MBE) system. Introducing nitrogen doping into an In0.3Ga0.7As channel can effectively reduce the effective energy band gap, resulting in an improved electron confinement capability. The thermal threshold coefficient (∂Vth/∂T) is very low, -1.07 mV/K, with an improved high-temperature linearity (∂GVS/∂T) of only 0.33 mV/K. Besides, improved high-temperature device characteristics have been achieved at 450 (300) K, including a gate-voltage swing (GVS) of 1.15 (1.2) V, a two-terminal gate-drain breakdown voltage (BVGD) of -14.4 (-15.8) V and a turn-on voltage (Von) of 0.92 (1.147) V.

Original languageEnglish
Pages (from-to)3328-3333
Number of pages6
JournalJournal of the Korean Physical Society
Volume53
Issue number6
DOIs
Publication statusPublished - 2008 Dec 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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