This work reports a novel AlGaAs/InGaAsN/GaAs heterostructure field-effect transistor (HFET) by integrating a dilute In0.3Ga 0.7AsN0.01 nitride-channel directly onto a GaAs substrate by using a molecular beam epitaxy (MBE) system. Introducing nitrogen doping into an In0.3Ga0.7As channel can effectively reduce the effective energy band gap, resulting in an improved electron confinement capability. The thermal threshold coefficient (∂Vth/∂T) is very low, -1.07 mV/K, with an improved high-temperature linearity (∂GVS/∂T) of only 0.33 mV/K. Besides, improved high-temperature device characteristics have been achieved at 450 (300) K, including a gate-voltage swing (GVS) of 1.15 (1.2) V, a two-terminal gate-drain breakdown voltage (BVGD) of -14.4 (-15.8) V and a turn-on voltage (Von) of 0.92 (1.147) V.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)