TY - JOUR
T1 - Investigations on Wide-Gap Al0.21Ga0.79N Channel MOS-HFETs with In0.12Al0.76Ga0.12N Barrier/Buffer and Drain Field-Plate
AU - Lee, Ching Sung
AU - Cheng, Chih Tsung
AU - Ke, Jian Hong
AU - Hsu, Wei Chou
N1 - Funding Information:
This work was supported by the Ministry of Science and Technology under Contract MOST 111-2221-E-035-071-MY3 and Contract 108-2221-E-035-038-MY3.
Publisher Copyright:
© 2013 IEEE.
PY - 2023
Y1 - 2023
N2 - This work investigates, for the first time, wide-gap Al0.21Ga0.79N channel metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with In0.12Al0.76Ga0.12N barrier/buffer and drain field-plate (DFP) designs. High-k and wide-gap Al2O3 was grown as the gate oxide and surface passivation by using non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique. A control device having the same epitaxial layers, except with In0.12Al0.88N barrier/buffer was studied in comparison. Enhanced spontaneous polarization effect, improved interfacial quality, and enhanced carrier confinement have been achieved by using the In0.12Al0.76Ga0.12N barrier/buffer design, which has successfully resulted in improved carrier transport, increased electron concentration, and high current densities. The present In0.12Al0.76Ga0.12N/AlN/Al0.21Ga0.79N MOS-HFET design with (without) DFP design has demonstrated superior maximum drain-source current density (IDS,max) of >1 (>1) A/mm at VDS=20 V, high saturated drain-source current density at VGS=0 V(IDSS0) of 791.1 (755) mA/mm, and low specific on-resistance (Ron,sp) of 2.83 (2.81) mΩ/cm2. High device figure-of-merit (FOM) on BVDS2/Ron,sp of 93.7 (75.4) MW/cm 2 was also obtained with the three-terminal on-state drain-source breakdown voltage (BVDS) of 515 (460) V. The present design is promisingly advantageous to high-current and high-voltage power-switching circuit applications.
AB - This work investigates, for the first time, wide-gap Al0.21Ga0.79N channel metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with In0.12Al0.76Ga0.12N barrier/buffer and drain field-plate (DFP) designs. High-k and wide-gap Al2O3 was grown as the gate oxide and surface passivation by using non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique. A control device having the same epitaxial layers, except with In0.12Al0.88N barrier/buffer was studied in comparison. Enhanced spontaneous polarization effect, improved interfacial quality, and enhanced carrier confinement have been achieved by using the In0.12Al0.76Ga0.12N barrier/buffer design, which has successfully resulted in improved carrier transport, increased electron concentration, and high current densities. The present In0.12Al0.76Ga0.12N/AlN/Al0.21Ga0.79N MOS-HFET design with (without) DFP design has demonstrated superior maximum drain-source current density (IDS,max) of >1 (>1) A/mm at VDS=20 V, high saturated drain-source current density at VGS=0 V(IDSS0) of 791.1 (755) mA/mm, and low specific on-resistance (Ron,sp) of 2.83 (2.81) mΩ/cm2. High device figure-of-merit (FOM) on BVDS2/Ron,sp of 93.7 (75.4) MW/cm 2 was also obtained with the three-terminal on-state drain-source breakdown voltage (BVDS) of 515 (460) V. The present design is promisingly advantageous to high-current and high-voltage power-switching circuit applications.
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U2 - 10.1109/JEDS.2023.3270273
DO - 10.1109/JEDS.2023.3270273
M3 - Article
AN - SCOPUS:85158874882
SN - 2168-6734
VL - 11
SP - 256
EP - 261
JO - IEEE Journal of the Electron Devices Society
JF - IEEE Journal of the Electron Devices Society
ER -