@inproceedings{ed25dc3b97754058b24b6c5bedaf7329,
title = "(Invited, Digital Presentation) Heterogeneous IGZO/Si CFET Monolithic 3D Integration",
abstract = "System-on-panel and monolithic 3D integration must be the main trend in the future. Heterogeneous channel materials need to be integrated on a chip for the different requirements. In the previous work, we innovated an advanced process to combine double gate IGZO high-frequency device and dual work function gate heterogeneous IGZO/Si CFET inverter/SRAM on a substrate. However, the heterogeneous CFET architecture is pretty complicated. Subsequently, the channel design, gate structure, and operation mode for both bottom polysilicon and top IGZO transistor are discussed in detail in this study.",
author = "Lee, {Yao Jen} and Chang, {Shu Wei} and Lee, {Wen Hsi} and Wang, {Yeong Her}",
note = "Publisher Copyright: {\textcopyright} 2022 ECS-The Electrochemical Society.; 242nd ECS Meeting ; Conference date: 09-10-2022 Through 13-10-2022",
year = "2022",
doi = "10.1149/10906.0145ecst",
language = "English",
series = "ECS Transactions",
publisher = "Institute of Physics",
number = "6",
pages = "145--152",
booktitle = "ECS Transactions",
address = "United Kingdom",
edition = "6",
}