Iodine-stabilized single-frequency green InGaN diode laser

Yi Hsi Chen, Wei Chen Lin, Jow Tsong Shy, Hsiang Chen Chui

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A 520-nm InGaN diode laser can emit a milliwatt-level, single-frequency laser beam when the applied current slightly exceeds the lasing threshold. The laser frequency was less sensitive to diode temperature and could be finely tuned by adjusting the applied current. Laser frequency was stabilized onto a hyperfine component in an iodine transition through the saturated absorption spectroscopy. The uncertainty of frequency stabilization was approximately 8 × 10−9 at a 10-s integration time. This compact laser system can replace the conventional green diode-pumped solid-state laser and applied as a frequency reference. A single longitudinal mode operational region with diode temperature, current, and output power was investigated.

Original languageEnglish
Pages (from-to)126-129
Number of pages4
JournalOptics Letters
Volume43
Issue number1
DOIs
Publication statusPublished - 2018 Jan 1

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Cite this

Chen, Y. H., Lin, W. C., Shy, J. T., & Chui, H. C. (2018). Iodine-stabilized single-frequency green InGaN diode laser. Optics Letters, 43(1), 126-129. https://doi.org/10.1364/OL.43.000126