The present study evaluated the feasibility of TiAlN films deposited using the ion beam sputter deposition (IBSD) method for metal-insulator-metal (MIM) (Ba,Sr)TiO3 (BST) capacitors. The BST films were crystallized at temperatures above 650 °C. TiAlN films deposited using the IBSD method were found having smooth surface and low electrical resistivity at high temperature conditions. TiAlN films showed a good diffusion barrier property against BST components. The J-E (current density-electric field) characteristics of Al/BST/TiAlN capacitors were good, with a high break down electric field of ± 2.5 MV/cm and a leakage current density of about 1 × 10- 5 A/cm2 at an applied field of ± 0.5 MV/cm. Thermal stress and lateral oxidation that occurred at the interface damaged the capacitor stacking structure. Macro holes that dispersed on the films resulted in higher leakage current and inconsistent J-E characteristics. Vacuum annealing with lower heating rate and furnace cooling, and a Ti-Al adhesion layer between TiAlN and the SiO2/Si substrate can effectively minimize the stress effect. TiAlN film deposited using IBSD can be considered as a potential electrode and diffusion barrier material for MIM BST capacitors.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry