Ion-sensitive field-effect transistor with silicon nitride gate for pH sensing

B. D. Liu, Y. K. Su, S. C. Chen

Research output: Contribution to journalArticlepeer-review

34 Citations (Scopus)

Abstract

An ion-sensitive field-effect transistor (ISFET) has been fabricated with silicon nitride as the gate to provide a pH-sensing membrane. Measurements of pH sensitivity, selectivity, hysteresis effect and long-term stability have been made. The pH sensitivity is 46mV per pH. The chemical response to the K+ ion is higher than that for the Na+ ion for this device. The long-term drift is about 1mV per hour after a ten-hour immersion. Results for an oxide gate ISFET are also shown for comparison.

Original languageEnglish
Pages (from-to)59-63
Number of pages5
JournalInternational Journal of Electronics
Volume67
Issue number1
DOIs
Publication statusPublished - 1989 Jul

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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