Iridium-based semi-transparent current spreading layer on short-period-superlattice (SPS) tunneling contact of InGaN/GaN LEDs

Ricky W. Chuang, Yueh Jye Chiu, Chia Lin Yu

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Iridium-containing and Ni(4 nm)/Au(6 nm) films were evaporated separately on the n+-InGaN-GaN short-period-superlattice (SPS) structure of light-emitting diodes (LEDs). The collective deposition of iridium and other metals as an ohmic contact induces the formation of highly transparent IrO2, which helps to enhance the light output and decrease the series resistance of LEDs. By comparing different metal films used as current spreading contact layer, Ir/Ni film annealed at 500 °C for 20 min in O2 ambient renders devices with lowest turn-on voltage at 20 mA and highest luminous intensity. Moreover, we also analyzed films using atomic force microscopy (AFM) with an emphasis on studying how the surface quality of Ir/Ni and Ni/Au films influences the current spreading and luminosity of LEDs.

Original languageEnglish
Pages (from-to)1212-1215
Number of pages4
JournalSolid-State Electronics
Volume50
Issue number7-8
DOIs
Publication statusPublished - 2006 Jul 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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