We have fabricated Schottky diodes on GaN epitaxial wafer by using Ir/Pt Schottky contacts. After oxidation, the measured leakage current was decreased from 116 nA to 17.8 pA. In other words, the leakage current after annealing in O2 was shown to be about four orders of magnitude smaller than that before annealing. These improvements may be attributed to IrOx formation of the metal layer, improvement of interface between the Schottky contact and the GaN layer and curing of defects due to oxidation. We also found that the Schottky barrier height and thermal stability after annealing is better than without annealing.
|Number of pages||4|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2007 Dec 1|
|Event||33rd International Symposium on Compound Semiconductors, ISCS-2006 - Vancouver, BC, Canada|
Duration: 2006 Aug 13 → 2006 Aug 17
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics