Ir/Pt Schottky contact oxidation for nitride-based Schottky barrier diodes

P. C. Chang, C. L. Yu, C. H. Liu, S. J. Chang, Y. K. Su, R. W. Chuang, Y. J. Chiu

Research output: Contribution to journalConference articlepeer-review

7 Citations (Scopus)


We have fabricated Schottky diodes on GaN epitaxial wafer by using Ir/Pt Schottky contacts. After oxidation, the measured leakage current was decreased from 116 nA to 17.8 pA. In other words, the leakage current after annealing in O2 was shown to be about four orders of magnitude smaller than that before annealing. These improvements may be attributed to IrOx formation of the metal layer, improvement of interface between the Schottky contact and the GaN layer and curing of defects due to oxidation. We also found that the Schottky barrier height and thermal stability after annealing is better than without annealing.

Original languageEnglish
Pages (from-to)1625-1628
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number5
Publication statusPublished - 2007
Event33rd International Symposium on Compound Semiconductors, ISCS-2006 - Vancouver, BC, Canada
Duration: 2006 Aug 132006 Aug 17

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics


Dive into the research topics of 'Ir/Pt Schottky contact oxidation for nitride-based Schottky barrier diodes'. Together they form a unique fingerprint.

Cite this