Abstract
Nanopillar arrays with InGaN/GaN multiple-quantum-disks (MQDs) are fabricated by focused-ion-beam milling with surface damage layer removed by KOH wet etching. Nano-light-emitting diodes (Nano-LEDs) made of the InGaN/GaN MQD nanopillars are found to have 19.49% less output power than that of a conventional LED. The reasons are analyzed in detail and considering their current-voltage and electroluminescence characteristics, internal quantum efficiency, external quantum efficiency, light extraction, and wall-plug efficiency. Our results suggest that nanopillar-LED can outperform if the density can be increased to 2.81 × 109 cm-2 with the size unchanged or the size can be increased to 854.4 nm with the density unchanged.
Original language | English |
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Article number | 233113 |
Journal | Applied Physics Letters |
Volume | 103 |
Issue number | 23 |
DOIs | |
Publication status | Published - 2013 Dec 2 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)