Is it viable to improve light output efficiency by nano-light-emitting diodes?

Chao Hung Wang, Yu Wen Huang, Shang En Wu, Chuan Pu Liu

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Nanopillar arrays with InGaN/GaN multiple-quantum-disks (MQDs) are fabricated by focused-ion-beam milling with surface damage layer removed by KOH wet etching. Nano-light-emitting diodes (Nano-LEDs) made of the InGaN/GaN MQD nanopillars are found to have 19.49% less output power than that of a conventional LED. The reasons are analyzed in detail and considering their current-voltage and electroluminescence characteristics, internal quantum efficiency, external quantum efficiency, light extraction, and wall-plug efficiency. Our results suggest that nanopillar-LED can outperform if the density can be increased to 2.81 × 109 cm-2 with the size unchanged or the size can be increased to 854.4 nm with the density unchanged.

Original languageEnglish
Article number233113
JournalApplied Physics Letters
Issue number23
Publication statusPublished - 2013 Dec 2

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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