Abstract
In this paper, we present an efficient and accurate IDDQ fault modeling technique for digital CMOS circuit. Both the normal and faulty 'current' behaviors of a CMOS digital circuit can be described by this model. Also the parasitic capacitive and inductive parameters can be emulated. A formal method for creating this model from any given CMOS circuit is outlined. Using this model, circuit design of built-in current sensors (BICSs) can be designed and validated without introducing the actual circuit under test (CUT) which implanted a fault. Experimental data for the application to the design of BICSs is also given.
| Original language | English |
|---|---|
| Pages (from-to) | 393-396 |
| Number of pages | 4 |
| Journal | Proceedings - IEEE International Symposium on Circuits and Systems |
| Volume | 1 |
| Publication status | Published - 1995 Jan 1 |
| Event | Proceedings of the 1995 IEEE International Symposium on Circuits and Systems-ISCAS 95. Part 3 (of 3) - Seattle, WA, USA Duration: 1995 Apr 30 → 1995 May 3 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering