Abstract
The authors report the fabrication of p-n junctions, consisting of n-type SrTiO3 or BaTiO3 and p-type Si substrates, by the pulsed-laser deposition technique. The BaTiO3/Si junction exhibits excellent rectifying behavior and significantly reduced leakage current at 300 K exceeding breakdown voltage of -25 V with leakage current <0.5 μA, while SrTiO3/Si with an interfacial layer shows moderate junction characteristics. It was demonstrated that the BaTiO3/Si grown at an optimum growth temperature of 650°C displayed superior performance which is promising for electronic devices. Both junctions show photocurrent at 300 K due to electron injection following the photoexcitation of n-type perovskite.
Original language | English |
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Article number | 092102 |
Journal | Applied Physics Letters |
Volume | 89 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2006 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)