Junction characteristics of SrTiO3 or BaTiO3 on p-Si (100) heterostructures

D. Hunter, K. Lord, T. M. Williams, K. Zhang, A. K. Pradhan, D. R. Sahu, J. L. Huang

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21 Citations (Scopus)

Abstract

The authors report the fabrication of p-n junctions, consisting of n-type SrTiO3 or BaTiO3 and p-type Si substrates, by the pulsed-laser deposition technique. The BaTiO3/Si junction exhibits excellent rectifying behavior and significantly reduced leakage current at 300 K exceeding breakdown voltage of -25 V with leakage current <0.5 μA, while SrTiO3/Si with an interfacial layer shows moderate junction characteristics. It was demonstrated that the BaTiO3/Si grown at an optimum growth temperature of 650°C displayed superior performance which is promising for electronic devices. Both junctions show photocurrent at 300 K due to electron injection following the photoexcitation of n-type perovskite.

Original languageEnglish
Article number092102
JournalApplied Physics Letters
Volume89
Issue number9
DOIs
Publication statusPublished - 2006

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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