TY - GEN
T1 - Junction transport in epitaxial film silicon heterojunction solar cells
AU - Young, David L.
AU - Li, Jian V.
AU - Teplin, Charles W.
AU - Stradins, Paul
AU - Branz, Howard M.
PY - 2011
Y1 - 2011
N2 - We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n ++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.
AB - We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n ++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.
UR - http://www.scopus.com/inward/record.url?scp=84861065029&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84861065029&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2011.6186665
DO - 10.1109/PVSC.2011.6186665
M3 - Conference contribution
AN - SCOPUS:84861065029
SN - 9781424499656
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 3349
EP - 3352
BT - Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
T2 - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Y2 - 19 June 2011 through 24 June 2011
ER -