Junction transport in epitaxial film silicon heterojunction solar cells

David L. Young; Jian V. Li; Charles W. Teplin; Paul Stradins; Howard M. Branz

doi:10.1109/PVSC.2011.6186665

Junction transport in epitaxial film silicon heterojunction solar cells

David L. Young, Jian V. Li, Charles W. Teplin, Paul Stradins, Howard M. Branz

Department of Aeronautics and Astronautics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n ⁺⁺ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

Original language	English
Title of host publication	Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Pages	3349-3352
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2011.6186665
Publication status	Published - 2011
Event	37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States Duration: 2011 Jun 19 → 2011 Jun 24

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Country/Territory	United States
City	Seattle, WA
Period	11-06-19 → 11-06-24

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2011.6186665

Cite this

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title = "Junction transport in epitaxial film silicon heterojunction solar cells",

abstract = "We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n ++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.",

author = "Young, {David L.} and Li, {Jian V.} and Teplin, {Charles W.} and Paul Stradins and Branz, {Howard M.}",

year = "2011",

doi = "10.1109/PVSC.2011.6186665",

language = "English",

isbn = "9781424499656",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "3349--3352",

booktitle = "Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011",

note = "37th IEEE Photovoltaic Specialists Conference, PVSC 2011 ; Conference date: 19-06-2011 Through 24-06-2011",

}

Young, DL, Li, JV, Teplin, CW, Stradins, P & Branz, HM 2011, Junction transport in epitaxial film silicon heterojunction solar cells. in Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011., 6186665, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 3349-3352, 37th IEEE Photovoltaic Specialists Conference, PVSC 2011, Seattle, WA, United States, 11-06-19. https://doi.org/10.1109/PVSC.2011.6186665

Junction transport in epitaxial film silicon heterojunction solar cells. / Young, David L.; Li, Jian V.; Teplin, Charles W. et al.

Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011. 2011. p. 3349-3352 6186665 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Stradins, Paul

AU - Branz, Howard M.

PY - 2011

Y1 - 2011

N2 - We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n ++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

AB - We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n ++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

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DO - 10.1109/PVSC.2011.6186665

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T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

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BT - Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011

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ER -

Junction transport in epitaxial film silicon heterojunction solar cells

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All Science Journal Classification (ASJC) codes

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