Ka-band 1-W phemt MMIC power amplifiers on 2mil-thick GaAs substrates

C. W. Huang, S. J. Chang, W. Wu, C. L. Wu, C. S. Chang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A fully matched Ka-band wideband pseudomorphic high-electron-mobility transistor (PHEMT) 1-W monolithic millimeter-wave integrated circuit (MMIC) high-power amplifier (HPA) without any external circuit is developed. The two-stage HPAs are prepared on 2-mil GaAs substrates with a small chip size of 3.46 × 2.9 mm. At least 10-dB small-signal gain, 29.5 dBm P1db, 31-dBm Psat, and better than 12-dB output return loss.

Original languageEnglish
Pages (from-to)181-185
Number of pages5
JournalMicrowave and Optical Technology Letters
Volume45
Issue number3
DOIs
Publication statusPublished - 2005 May 5

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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