A fully matched Ka-band wideband pseudomorphic high-electron-mobility transistor (PHEMT) 1-W monolithic millimeter-wave integrated circuit (MMIC) high-power amplifier (HPA) without any external circuit is developed. The two-stage HPAs are prepared on 2-mil GaAs substrates with a small chip size of 3.46 × 2.9 mm. At least 10-dB small-signal gain, 29.5 dBm P1db, 31-dBm Psat, and better than 12-dB output return loss.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering