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Kinetics and thermodynamics of silicon carbide physical vapor transport reactions: A quantum chemistry and kinetic Monte Carlo approach
Ahmed Abubakar Alao,
Wen Dung Hsu
Department of Materials Science and Engineering
International Curriculum for Advanced Materials Program
Research output
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Contribution to journal
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Article
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peer-review
1
Citation (Scopus)
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Dive into the research topics of 'Kinetics and thermodynamics of silicon carbide physical vapor transport reactions: A quantum chemistry and kinetic Monte Carlo approach'. Together they form a unique fingerprint.
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Chemical Compounds
Crystal Growth
52%
Electron Correlation
32%
Energy
12%
Isotherm
20%
Molecular Dynamics
19%
Molecule
18%
Partial Pressure
25%
Polarization
20%
Potential Energy Surface
51%
Quantum Chemistry
87%
Rate Constant
17%
Reaction Path
28%
Silicon Carbide
89%
Sublimation
61%
Thermodynamics
49%
Transition State
22%
Physics & Astronomy
chemical reactions
10%
configurations
6%
crystal growth
21%
electrons
4%
energy
3%
geometry
6%
interactions
4%
isotherms
11%
kinetics
48%
molecular dynamics
8%
molecules
12%
optimization
7%
partial pressure
11%
polarization
6%
potential energy
19%
products
22%
quantum chemistry
100%
reaction kinetics
20%
silicon carbides
77%
sublimation
25%
thermodynamics
54%
trajectories
9%
valence
16%
vapors
60%