L-valley electrons in SiGe heterostructures: Highly anisotropic and tunable Zeeman and Rashba-like spin splittings

A. A. Kiselev, F. A. Baron, K. W. Kim, K. L. Wang, E. Yablonovitch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have conducted a detailed and systematic analysis of Zeeman and Rashba-like (structure-asymmetry-induced) spin splittings in SiGe heterostructures. The calculations were performed in the framework of a relevant kp model, developed specifically for the L point states of the group IV semiconductors. Effects of the alloy composition, crystallographic orientation, spatial confinement, strain, and electric field are accounted for and documented for a realistic structure design. Notable Rashba effect, considerable anisotropy and deviation of the g tensor components from their respective bulk values make the SiGe structures a friendly choice for the effective spin manipulation.

Original languageEnglish
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages411-412
Number of pages2
DOIs
Publication statusPublished - 2005 Jun 30
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: 2004 Jul 262004 Jul 30

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

ConferencePHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period04-07-2604-07-30

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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