L-valley electrons in SiGe heterostructures: Highly anisotropic and tunable Zeeman and Rashba-like spin splittings

A. A. Kiselev; F. A. Baron; K. W. Kim; K. L. Wang; E. Yablonovitch

doi:10.1063/1.1994160

L-valley electrons in SiGe heterostructures: Highly anisotropic and tunable Zeeman and Rashba-like spin splittings

A. A. Kiselev, F. A. Baron, K. W. Kim, K. L. Wang, E. Yablonovitch

College of Electrical Engineering and Computer Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have conducted a detailed and systematic analysis of Zeeman and Rashba-like (structure-asymmetry-induced) spin splittings in SiGe heterostructures. The calculations were performed in the framework of a relevant kp model, developed specifically for the L point states of the group IV semiconductors. Effects of the alloy composition, crystallographic orientation, spatial confinement, strain, and electric field are accounted for and documented for a realistic structure design. Notable Rashba effect, considerable anisotropy and deviation of the g tensor components from their respective bulk values make the SiGe structures a friendly choice for the effective spin manipulation.

Original language	English
Title of host publication	PHYSICS OF SEMICONDUCTORS
Subtitle of host publication	27th International Conference on the Physics of Semiconductors, ICPS-27
Pages	411-412
Number of pages	2
DOIs	https://doi.org/10.1063/1.1994160
Publication status	Published - 2005 Jun 30
Event	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States Duration: 2004 Jul 26 → 2004 Jul 30

Publication series

Name	AIP Conference Proceedings
Volume	772
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Country	United States
City	Flagstaff, AZ
Period	04-07-26 → 04-07-30

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.1994160

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Kiselev, A. A., Baron, F. A., Kim, K. W., Wang, K. L., & Yablonovitch, E. (2005). L-valley electrons in SiGe heterostructures: Highly anisotropic and tunable Zeeman and Rashba-like spin splittings. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (pp. 411-412). (AIP Conference Proceedings; Vol. 772). https://doi.org/10.1063/1.1994160

@inproceedings{650c8c2670954e79890dc739bc02ebf0,

title = "L-valley electrons in SiGe heterostructures: Highly anisotropic and tunable Zeeman and Rashba-like spin splittings",

abstract = "We have conducted a detailed and systematic analysis of Zeeman and Rashba-like (structure-asymmetry-induced) spin splittings in SiGe heterostructures. The calculations were performed in the framework of a relevant kp model, developed specifically for the L point states of the group IV semiconductors. Effects of the alloy composition, crystallographic orientation, spatial confinement, strain, and electric field are accounted for and documented for a realistic structure design. Notable Rashba effect, considerable anisotropy and deviation of the g tensor components from their respective bulk values make the SiGe structures a friendly choice for the effective spin manipulation.",

author = "Kiselev, {A. A.} and Baron, {F. A.} and Kim, {K. W.} and Wang, {K. L.} and E. Yablonovitch",

note = "Copyright: Copyright 2011 Elsevier B.V., All rights reserved.; PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 ; Conference date: 26-07-2004 Through 30-07-2004",

year = "2005",

month = jun,

day = "30",

doi = "10.1063/1.1994160",

language = "English",

isbn = "0735402574",

series = "AIP Conference Proceedings",

pages = "411--412",

booktitle = "PHYSICS OF SEMICONDUCTORS",

}

Kiselev, AA, Baron, FA, Kim, KW, Wang, KL & Yablonovitch, E 2005, L-valley electrons in SiGe heterostructures: Highly anisotropic and tunable Zeeman and Rashba-like spin splittings. in PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. AIP Conference Proceedings, vol. 772, pp. 411-412, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, United States, 04-07-26. https://doi.org/10.1063/1.1994160

L-valley electrons in SiGe heterostructures : Highly anisotropic and tunable Zeeman and Rashba-like spin splittings. / Kiselev, A. A.; Baron, F. A.; Kim, K. W.; Wang, K. L.; Yablonovitch, E.

PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. p. 411-412 (AIP Conference Proceedings; Vol. 772).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - L-valley electrons in SiGe heterostructures

T2 - PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27

AU - Kiselev, A. A.

AU - Baron, F. A.

AU - Kim, K. W.

AU - Wang, K. L.

AU - Yablonovitch, E.

PY - 2005/6/30

Y1 - 2005/6/30

N2 - We have conducted a detailed and systematic analysis of Zeeman and Rashba-like (structure-asymmetry-induced) spin splittings in SiGe heterostructures. The calculations were performed in the framework of a relevant kp model, developed specifically for the L point states of the group IV semiconductors. Effects of the alloy composition, crystallographic orientation, spatial confinement, strain, and electric field are accounted for and documented for a realistic structure design. Notable Rashba effect, considerable anisotropy and deviation of the g tensor components from their respective bulk values make the SiGe structures a friendly choice for the effective spin manipulation.

AB - We have conducted a detailed and systematic analysis of Zeeman and Rashba-like (structure-asymmetry-induced) spin splittings in SiGe heterostructures. The calculations were performed in the framework of a relevant kp model, developed specifically for the L point states of the group IV semiconductors. Effects of the alloy composition, crystallographic orientation, spatial confinement, strain, and electric field are accounted for and documented for a realistic structure design. Notable Rashba effect, considerable anisotropy and deviation of the g tensor components from their respective bulk values make the SiGe structures a friendly choice for the effective spin manipulation.

UR - http://www.scopus.com/inward/record.url?scp=33749499123&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33749499123&partnerID=8YFLogxK

U2 - 10.1063/1.1994160

DO - 10.1063/1.1994160

M3 - Conference contribution

AN - SCOPUS:33749499123

SN - 0735402574

SN - 9780735402577

T3 - AIP Conference Proceedings

SP - 411

EP - 412

BT - PHYSICS OF SEMICONDUCTORS

Y2 - 26 July 2004 through 30 July 2004

ER -

L-valley electrons in SiGe heterostructures: Highly anisotropic and tunable Zeeman and Rashba-like spin splittings

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