Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function difference

D. S. Yu; Albert Chin; C. H. Wu; M. F. Li; C. Zhu; S. J. Wang; W. J. Yoo; B. F. Hung; S. P. McAlister

Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function difference

D. S. Yu, Albert Chin, C. H. Wu, M. F. Li, C. Zhu, S. J. Wang, W. J. Yoo, B. F. Hung, S. P. McAlister

Institute of Microelectronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

Metallic diffusion through high-k HfO₂, caused by high temperature metal-nitride decomposition, was reduced by using robust HfAlON. Useful dual effective work-function (φ_m,eff) of 4.25 and 5.15 eV are obtained in TaTb_0.2N/HfAlON and Ir/HfAlON at 1.7nm EOT. Good dual φ_m,eff of 4.15 and 4.9 eV are also obtained in Yb _xSi/HfAlON and Ir_xSi/HfAlON FUSI-gates by reduced metal diffusion at lower temperature.

Original language	English
Title of host publication	IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
Pages	634-637
Number of pages	4
Publication status	Published - 2005
Event	IEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States Duration: 2005 Dec 5 → 2005 Dec 7

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2005
ISSN (Print)	0163-1918

Other

Other	IEEE International Electron Devices Meeting, 2005 IEDM
Country	United States
City	Washington, DC, MD
Period	05-12-05 → 05-12-07

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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Yu, D. S., Chin, A., Wu, C. H., Li, M. F., Zhu, C., Wang, S. J., Yoo, W. J., Hung, B. F., & McAlister, S. P. (2005). Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function difference. In IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest (pp. 634-637). [1609430] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005).

Yu, D. S. ; Chin, Albert ; Wu, C. H. ; Li, M. F. ; Zhu, C. ; Wang, S. J. ; Yoo, W. J. ; Hung, B. F. ; McAlister, S. P. / Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function difference. IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest. 2005. pp. 634-637 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{d7f83391948345dfa323dcb47e9586b4,

title = "Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function difference",

abstract = "Metallic diffusion through high-k HfO2, caused by high temperature metal-nitride decomposition, was reduced by using robust HfAlON. Useful dual effective work-function (φm,eff) of 4.25 and 5.15 eV are obtained in TaTb0.2N/HfAlON and Ir/HfAlON at 1.7nm EOT. Good dual φm,eff of 4.15 and 4.9 eV are also obtained in Yb xSi/HfAlON and IrxSi/HfAlON FUSI-gates by reduced metal diffusion at lower temperature.",

author = "Yu, {D. S.} and Albert Chin and Wu, {C. H.} and Li, {M. F.} and C. Zhu and Wang, {S. J.} and Yoo, {W. J.} and Hung, {B. F.} and McAlister, {S. P.}",

year = "2005",

language = "English",

isbn = "078039268X",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "634--637",

booktitle = "IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest",

note = "IEEE International Electron Devices Meeting, 2005 IEDM ; Conference date: 05-12-2005 Through 07-12-2005",

}

Yu, DS, Chin, A, Wu, CH, Li, MF, Zhu, C, Wang, SJ, Yoo, WJ, Hung, BF & McAlister, SP 2005, Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function difference. in IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest., 1609430, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2005, pp. 634-637, IEEE International Electron Devices Meeting, 2005 IEDM, Washington, DC, MD, United States, 05-12-05.

Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function difference. / Yu, D. S.; Chin, Albert; Wu, C. H.; Li, M. F.; Zhu, C.; Wang, S. J.; Yoo, W. J.; Hung, B. F.; McAlister, S. P.

IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest. 2005. p. 634-637 1609430 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function difference

AU - Yu, D. S.

AU - Chin, Albert

AU - Wu, C. H.

AU - Li, M. F.

AU - Zhu, C.

AU - Wang, S. J.

AU - Yoo, W. J.

AU - Hung, B. F.

AU - McAlister, S. P.

PY - 2005

Y1 - 2005

N2 - Metallic diffusion through high-k HfO2, caused by high temperature metal-nitride decomposition, was reduced by using robust HfAlON. Useful dual effective work-function (φm,eff) of 4.25 and 5.15 eV are obtained in TaTb0.2N/HfAlON and Ir/HfAlON at 1.7nm EOT. Good dual φm,eff of 4.15 and 4.9 eV are also obtained in Yb xSi/HfAlON and IrxSi/HfAlON FUSI-gates by reduced metal diffusion at lower temperature.

AB - Metallic diffusion through high-k HfO2, caused by high temperature metal-nitride decomposition, was reduced by using robust HfAlON. Useful dual effective work-function (φm,eff) of 4.25 and 5.15 eV are obtained in TaTb0.2N/HfAlON and Ir/HfAlON at 1.7nm EOT. Good dual φm,eff of 4.15 and 4.9 eV are also obtained in Yb xSi/HfAlON and IrxSi/HfAlON FUSI-gates by reduced metal diffusion at lower temperature.

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M3 - Conference contribution

AN - SCOPUS:33847759061

SN - 078039268X

SN - 9780780392687

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 634

EP - 637

BT - IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest

T2 - IEEE International Electron Devices Meeting, 2005 IEDM

Y2 - 5 December 2005 through 7 December 2005

ER -