Large Area 21.6% Efficiency Front Junction N-type Cell with Screen Printed Tunnel Oxide Passivated Poly-Si Rear Contact

Ying Yuan Huang; Young Woo Ok; Ajay D. Upadhyaya; Vijaykumar D. Upadhyaya; Keeya Madani; Ajeet Rohatgi

doi:10.1109/PVSC40753.2019.8980527

Large Area 21.6% Efficiency Front Junction N-type Cell with Screen Printed Tunnel Oxide Passivated Poly-Si Rear Contact

Ying Yuan Huang, Young Woo Ok, Ajay D. Upadhyaya, Vijaykumar D. Upadhyaya, Keeya Madani, Ajeet Rohatgi

Institute of Microelectronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Abstract

We report on the implementation of screen printed carrier-selective tunnel oxide passivated poly-Si rear contact for high-efficiency front junction crystalline Si solar cells. Using a 15Å thick tunnel oxide grown in nitric acid at 100°C and capped with 100nm LPCVD grown n⁺ poly-Si, we were able to achieve excellent rear contact passivation even after the formation of screen printed contacts. The saturation current density on the rear side (J_0b') without metal was 1.7 fA/cm². After firing the screen printed Ag contacts through SiN cap on poly-Si, with 9% metal coverage, J_0b' increased to only ∼5 fA/cm². An ion-implanted 180 Ω/□ boron doped homogeneous emitter was used on the front. This resulted in large area (239 cm²) 21.6% cells on industrial grade n-type CZ Si wafer. Smaller area 100 cm² cells gave 22% efficiency.

Original language	English
Title of host publication	2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1120-1123
Number of pages	4
ISBN (Electronic)	9781728104942
DOIs	https://doi.org/10.1109/PVSC40753.2019.8980527
Publication status	Published - 2019 Jun
Event	46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States Duration: 2019 Jun 16 → 2019 Jun 21

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/Territory	United States
City	Chicago
Period	19-06-16 → 19-06-21

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC40753.2019.8980527

Cite this

Huang, Y. Y., Ok, Y. W., Upadhyaya, A. D., Upadhyaya, V. D., Madani, K., & Rohatgi, A. (2019). Large Area 21.6% Efficiency Front Junction N-type Cell with Screen Printed Tunnel Oxide Passivated Poly-Si Rear Contact. In 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019 (pp. 1120-1123). Article 8980527 (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC40753.2019.8980527

Huang, Ying Yuan ; Ok, Young Woo ; Upadhyaya, Ajay D. et al. / Large Area 21.6% Efficiency Front Junction N-type Cell with Screen Printed Tunnel Oxide Passivated Poly-Si Rear Contact. 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 1120-1123 (Conference Record of the IEEE Photovoltaic Specialists Conference).

@inproceedings{5edb45359006434eb9de5b2f21e0163e,

title = "Large Area 21.6% Efficiency Front Junction N-type Cell with Screen Printed Tunnel Oxide Passivated Poly-Si Rear Contact",

abstract = "We report on the implementation of screen printed carrier-selective tunnel oxide passivated poly-Si rear contact for high-efficiency front junction crystalline Si solar cells. Using a 15{\AA} thick tunnel oxide grown in nitric acid at 100°C and capped with 100nm LPCVD grown n+ poly-Si, we were able to achieve excellent rear contact passivation even after the formation of screen printed contacts. The saturation current density on the rear side (J0b') without metal was 1.7 fA/cm2. After firing the screen printed Ag contacts through SiN cap on poly-Si, with 9% metal coverage, J0b' increased to only ∼5 fA/cm2. An ion-implanted 180 Ω/□ boron doped homogeneous emitter was used on the front. This resulted in large area (239 cm2) 21.6% cells on industrial grade n-type CZ Si wafer. Smaller area 100 cm2 cells gave 22% efficiency.",

author = "Huang, {Ying Yuan} and Ok, {Young Woo} and Upadhyaya, {Ajay D.} and Upadhyaya, {Vijaykumar D.} and Keeya Madani and Ajeet Rohatgi",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 ; Conference date: 16-06-2019 Through 21-06-2019",

year = "2019",

month = jun,

doi = "10.1109/PVSC40753.2019.8980527",

language = "English",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

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Huang, YY, Ok, YW, Upadhyaya, AD, Upadhyaya, VD, Madani, K & Rohatgi, A 2019, Large Area 21.6% Efficiency Front Junction N-type Cell with Screen Printed Tunnel Oxide Passivated Poly-Si Rear Contact. in 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019., 8980527, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 1120-1123, 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States, 19-06-16. https://doi.org/10.1109/PVSC40753.2019.8980527

Large Area 21.6% Efficiency Front Junction N-type Cell with Screen Printed Tunnel Oxide Passivated Poly-Si Rear Contact. / Huang, Ying Yuan; Ok, Young Woo; Upadhyaya, Ajay D. et al.
2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 1120-1123 8980527 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Huang, Ying Yuan

AU - Ok, Young Woo

AU - Upadhyaya, Ajay D.

AU - Upadhyaya, Vijaykumar D.

AU - Madani, Keeya

AU - Rohatgi, Ajeet

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N2 - We report on the implementation of screen printed carrier-selective tunnel oxide passivated poly-Si rear contact for high-efficiency front junction crystalline Si solar cells. Using a 15Å thick tunnel oxide grown in nitric acid at 100°C and capped with 100nm LPCVD grown n+ poly-Si, we were able to achieve excellent rear contact passivation even after the formation of screen printed contacts. The saturation current density on the rear side (J0b') without metal was 1.7 fA/cm2. After firing the screen printed Ag contacts through SiN cap on poly-Si, with 9% metal coverage, J0b' increased to only ∼5 fA/cm2. An ion-implanted 180 Ω/□ boron doped homogeneous emitter was used on the front. This resulted in large area (239 cm2) 21.6% cells on industrial grade n-type CZ Si wafer. Smaller area 100 cm2 cells gave 22% efficiency.

AB - We report on the implementation of screen printed carrier-selective tunnel oxide passivated poly-Si rear contact for high-efficiency front junction crystalline Si solar cells. Using a 15Å thick tunnel oxide grown in nitric acid at 100°C and capped with 100nm LPCVD grown n+ poly-Si, we were able to achieve excellent rear contact passivation even after the formation of screen printed contacts. The saturation current density on the rear side (J0b') without metal was 1.7 fA/cm2. After firing the screen printed Ag contacts through SiN cap on poly-Si, with 9% metal coverage, J0b' increased to only ∼5 fA/cm2. An ion-implanted 180 Ω/□ boron doped homogeneous emitter was used on the front. This resulted in large area (239 cm2) 21.6% cells on industrial grade n-type CZ Si wafer. Smaller area 100 cm2 cells gave 22% efficiency.

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PB - Institute of Electrical and Electronics Engineers Inc.

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Y2 - 16 June 2019 through 21 June 2019

ER -

Huang YY, Ok YW, Upadhyaya AD, Upadhyaya VD, Madani K, Rohatgi A. Large Area 21.6% Efficiency Front Junction N-type Cell with Screen Printed Tunnel Oxide Passivated Poly-Si Rear Contact. In 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 1120-1123. 8980527. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC40753.2019.8980527

Large Area 21.6% Efficiency Front Junction N-type Cell with Screen Printed Tunnel Oxide Passivated Poly-Si Rear Contact

Abstract

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