TY - JOUR
T1 - Large-Area Broadband Near-Perfect Absorption from a Thin Chalcogenide Film Coupled to Gold Nanoparticles
AU - Cao, Tun
AU - Liu, Kuan
AU - Lu, Li
AU - Chui, Hsiang Chen
AU - Simpson, Robert E.
N1 - Funding Information:
*E-mail: caotun1806@dlut.edu.cn. ORCID Tun Cao: 0000-0003-3536-0092 Li Lu: 0000-0002-1371-4091 Author Contributions The manuscript was written through contributions of all authors. All authors have given approval to the final version of the manuscript. Funding This work was supported by the Singapore−China Joint Research Program (JRP) with grant number 2015DFG12630 from the International Science & Technology Cooperation Program of China and grant number 142020046 from the Singapore Agency for Science, Technology and Research, A*Star. T.C. acknowledges support from the Program for Liaoning Excellent Talents in University (grant no. LJQ2015021). L.L. is grateful for his Ministry of Education (MoE) studentship. Notes The authors declare no competing financial interest.
PY - 2019/2/6
Y1 - 2019/2/6
N2 - Perfect absorbers that can efficiently absorb electromagnetic waves over a broad spectral range are crucial for energy harvesting, light detection, and optical camouflage. Recently, perfect absorbers based on a metasurface have attracted intensive attention. However, high-performance metasurface absorbers in the visible spectra require strict fabrication tolerances, and this is a formidable challenge. Moreover, fabricating subwavelength meta-atoms requires a top-down approach, thus limiting their scalability and spectral applicability. Here, we introduce a plasmonic nearly perfect absorber that exhibits a measured polarization-insensitive absorptance of ∼92% across the spectral region from 400 to 1000 nm. The absorber is realized via a one-step self-assembly deposition of 50 nm gold (Au) nanoparticle (NP) clusters onto a 35 nm-thick Ge 2 Sb 2 Te 5 (GST225) chalcogenide film. An excellent agreement between the measured and theoretically simulated absorptance was found. The coalescence of the lossy GST225 dielectric layer and high density of localized surface plasmon resonance modes induced by the randomly distributed Au NPs play a vital role in obtaining the nearly perfect absorptance. The exceptionally high absorptance together with large-area high-throughput self-assembly fabrication demonstrates their potential for industrial-scale manufacturability and consequential widespread applications in thermophotovoltaics, photodetection, and sensing.
AB - Perfect absorbers that can efficiently absorb electromagnetic waves over a broad spectral range are crucial for energy harvesting, light detection, and optical camouflage. Recently, perfect absorbers based on a metasurface have attracted intensive attention. However, high-performance metasurface absorbers in the visible spectra require strict fabrication tolerances, and this is a formidable challenge. Moreover, fabricating subwavelength meta-atoms requires a top-down approach, thus limiting their scalability and spectral applicability. Here, we introduce a plasmonic nearly perfect absorber that exhibits a measured polarization-insensitive absorptance of ∼92% across the spectral region from 400 to 1000 nm. The absorber is realized via a one-step self-assembly deposition of 50 nm gold (Au) nanoparticle (NP) clusters onto a 35 nm-thick Ge 2 Sb 2 Te 5 (GST225) chalcogenide film. An excellent agreement between the measured and theoretically simulated absorptance was found. The coalescence of the lossy GST225 dielectric layer and high density of localized surface plasmon resonance modes induced by the randomly distributed Au NPs play a vital role in obtaining the nearly perfect absorptance. The exceptionally high absorptance together with large-area high-throughput self-assembly fabrication demonstrates their potential for industrial-scale manufacturability and consequential widespread applications in thermophotovoltaics, photodetection, and sensing.
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U2 - 10.1021/acsami.8b21452
DO - 10.1021/acsami.8b21452
M3 - Article
C2 - 30632371
AN - SCOPUS:85061157583
VL - 11
SP - 5176
EP - 5182
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 5
ER -