Large magnetoresistance and Fermi surface study of Sb2Se2Te single crystal

K. Shrestha, V. Marinova, D. Graf, B. Lorenz, C. W. Chu

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8 Citations (Scopus)

Abstract

We have studied the magnetotransport properties of a Sb2Se2Te single crystal. Magnetoresistance (MR) is maximum when the magnetic field is perpendicular to the sample surface and reaches a value of 1100% at B = 31 T with no sign of saturation. MR shows Shubnikov de Haas (SdH) oscillations above B = 15 T. The frequency spectrum of SdH oscillations consists of three distinct peaks at α = 32 T, β = 80 T, and γ = 117 T indicating the presence of three Fermi surface pockets. Among these frequencies, β is the prominent peak in the frequency spectrum of SdH oscillations measured at different tilt angles of the sample with respect to the magnetic field. From the angle dependence β and Berry phase calculations, we have confirmed the trivial topology of the β-pocket. The cyclotron masses of charge carriers, obtained by using the Lifshitz-Kosevich formula, are found to be mβ∗=0.16mo and mγ∗=0.63mo for the β and γ bands, respectively. The Large MR of Sb2Se2Te is suitable for utilization in electronic instruments such as computer hard discs, high field magnetic sensors, and memory devices.

Original languageEnglish
Article number125901
JournalJournal of Applied Physics
Volume122
Issue number12
DOIs
Publication statusPublished - 2017 Sep 28

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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