Abstract
Dense nanoscale twins were introduced into Cu films and nanowires through bombardment with high-energy Ar+ ions at low temperatures. Both the twin boundary density and indentation hardness of the ion-irradiated Cu films increased with decreases in the bombardment temperature. The improved mechanical strength in the ion-irradiated Cu films is attributed to twin boundary-dislocation and dislocation -dislocation interactions. The strengthened region is several hundreds of nanometers beneath the surface of the bombarded nanowires and thin strips. A mechanism based on irradiation-induced thermal spike cascades is proposed to explain the influence of the energy of the Ar+ ions and bombardment temperature on nanoscale twinning in crystalline Cu. This study provides a route to developing advanced interconnection technology for micro- and nanoelectronic devices.
Original language | English |
---|---|
Pages (from-to) | 9805-9812 |
Number of pages | 8 |
Journal | Journal of Materials Chemistry C |
Volume | 2 |
Issue number | 46 |
DOIs | |
Publication status | Published - 2014 Dec 14 |
All Science Journal Classification (ASJC) codes
- General Chemistry
- Materials Chemistry