Large-signal resonant tunneling diode model for SPICE3 simulation

Tai-Haur Kuo, Hung C. Lin, Umadevi Anandakrishnan, Robert C. Potter, Dave Shupe

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

The I-V characteristics of a multipeak resonant tunneling diode (RTD) are analyzed. A large signal model is developed so that the multipeak RTD can be used with the SPICE3 circuit simulation program. The simulated result of a 4-b A/D (analog-to-digital) converter using this model is shown. It is noted that the model can be used with existing SPICE3 device models to simulate the performance of complex circuits that contain resonant tunneling diodes.

Original languageEnglish
Pages (from-to)567-570
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1989

Fingerprint

Resonant tunneling diodes
resonant tunneling diodes
simulation
Circuit simulation
analog to digital converters
Digital to analog conversion
Networks (circuits)

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Kuo, Tai-Haur ; Lin, Hung C. ; Anandakrishnan, Umadevi ; Potter, Robert C. ; Shupe, Dave. / Large-signal resonant tunneling diode model for SPICE3 simulation. In: Technical Digest - International Electron Devices Meeting. 1989 ; pp. 567-570.
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Large-signal resonant tunneling diode model for SPICE3 simulation. / Kuo, Tai-Haur; Lin, Hung C.; Anandakrishnan, Umadevi; Potter, Robert C.; Shupe, Dave.

In: Technical Digest - International Electron Devices Meeting, 1989, p. 567-570.

Research output: Contribution to journalArticle

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AU - Lin, Hung C.

AU - Anandakrishnan, Umadevi

AU - Potter, Robert C.

AU - Shupe, Dave

PY - 1989

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