Large-signal resonant tunneling diode model for SPICE3 simulation

Tai Haur Kuo, Hung C. Lin, Umadevi Anandakrishnan, Robert C. Potter, Dave Shupe

Research output: Contribution to journalConference articlepeer-review

29 Citations (Scopus)


The I-V characteristics of a multipeak resonant tunneling diode (RTD) are analyzed. A large signal model is developed so that the multipeak RTD can be used with the SPICE3 circuit simulation program. The simulated result of a 4-b A/D (analog-to-digital) converter using this model is shown. It is noted that the model can be used with existing SPICE3 device models to simulate the performance of complex circuits that contain resonant tunneling diodes.

Original languageEnglish
Pages (from-to)567-570
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1989 Dec 1
Event1989 International Electron Devices Meeting - Technical Digest - Washington, DC, USA
Duration: 1989 Dec 31989 Dec 6

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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