TY - JOUR
T1 - Large Tunneling Magnetoresistance in VSe 2 /MoS 2 Magnetic Tunnel Junction
AU - Zhou, Jiaqi
AU - Qiao, Junfeng
AU - Duan, Chun Gang
AU - Bournel, Arnaud
AU - Wang, Kang L.
AU - Zhao, Weisheng
N1 - Funding Information:
The authors thank the National Natural Science Foundation of China (Grant Nos. 61627813 and 61571023), the International Collaboration Project B16001, and the National Key Technology Program of China 2017ZX01032101 for their financial support of this work. This work is supported by the Academic Excellence Foundation of BUAA for PhD Students. The calculations were performed on TianHe-1A supercomputer at National Supercomputer Center in Tianjin.
Publisher Copyright:
© 2019 American Chemical Society.
PY - 2019/5/15
Y1 - 2019/5/15
N2 - Two-dimensional (2D) van der Waals (vdW) materials provide the possibility of realizing heterostructures with coveted properties. Here, we report a theoretical investigation of the vdW magnetic tunnel junction (MTJ) based on VSe 2 /MoS 2 heterojunction, where the VSe 2 monolayer acts as a ferromagnet with roomerature ferromagnetism. We propose the concept of spin-orbit torque (SOT) vdW MTJ with reliable reading and efficient writing operations. The nonequilibrium study reveals a large tunneling magnetoresistance of 846% at 300 K, identifying significantly its parallel and antiparallel states. Thanks to the strong spin Hall conductivity of MoS 2 , SOT is promising for the magnetization switching of VSe 2 free layer. Quantum-well states come into being and resonances appear in MTJ, suggesting that the voltage control can adjust transport properties effectively. The SOT vdW MTJ based on VSe 2 /MoS 2 provides desirable performance and experimental feasibility, offering new opportunities for 2D spintronics.
AB - Two-dimensional (2D) van der Waals (vdW) materials provide the possibility of realizing heterostructures with coveted properties. Here, we report a theoretical investigation of the vdW magnetic tunnel junction (MTJ) based on VSe 2 /MoS 2 heterojunction, where the VSe 2 monolayer acts as a ferromagnet with roomerature ferromagnetism. We propose the concept of spin-orbit torque (SOT) vdW MTJ with reliable reading and efficient writing operations. The nonequilibrium study reveals a large tunneling magnetoresistance of 846% at 300 K, identifying significantly its parallel and antiparallel states. Thanks to the strong spin Hall conductivity of MoS 2 , SOT is promising for the magnetization switching of VSe 2 free layer. Quantum-well states come into being and resonances appear in MTJ, suggesting that the voltage control can adjust transport properties effectively. The SOT vdW MTJ based on VSe 2 /MoS 2 provides desirable performance and experimental feasibility, offering new opportunities for 2D spintronics.
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U2 - 10.1021/acsami.9b02493
DO - 10.1021/acsami.9b02493
M3 - Article
C2 - 30983319
AN - SCOPUS:85065530159
SN - 1944-8244
VL - 11
SP - 17647
EP - 17653
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
IS - 19
ER -